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Inclined cavity surface two-dimensional photonic crystal distribution feedback quantum cascade laser and preparation method

A two-dimensional photonic crystal, distributed feedback technology, used in semiconductor lasers, lasers, phonon exciters, etc.

Inactive Publication Date: 2011-04-20
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for the mid-infrared two-dimensional photonic crystal distribution feedback quantum cascade laser, the photonic crystal lattice is a defect-free type, and the smallest lattice period is greater than 500nm. The above two restrictions no longer exist for the mid-infrared distribution feedback laser.

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Embodiment Construction

[0048] see Figure 1 to Figure 12 , the present invention provides a two-dimensional photonic crystal distributed feedback quantum cascade laser with inclined cavity surface, comprising:

[0049] An InP substrate 1; wherein the doping concentration of the InP substrate 1 is 3×10 17 cm -3 ;

[0050] An InP waveguide confinement layer 2, the InP waveguide confinement layer 2 is fabricated on the InP substrate 1, and its doping concentration is 2-6×10 16 cm -3 , the thickness is 0.8-1.3μm;

[0051] An InGaAs lower waveguide layer 3, the InGaAs lower waveguide layer 3 is fabricated on the InP waveguide confinement layer 2, and its doping concentration is 3-6×10 16 cm -3 , the thickness is 200-400nm;

[0052] A strain compensation active layer 4 is a multi-layer InGaAs and InAlAs periodic structure, the strain compensation active layer 4 is fabricated on the InGaAs lower waveguide layer 3, its total thickness is 1.57 μm, and the designed lasing wavelength is 4.6 μm;

[005...

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Abstract

The invention discloses an inclined cavity surface two-dimensional photonic crystal distribution feedback quantum cascade laser and a preparation method. The inclined cavity surface two-dimensional photonic crystal distribution feedback quantum cascade laser comprises an InP substrate, an InP waveguide limit layer manufactured on the InP substrate, an InGaAs lower waveguide layer manufactured on the InP waveguide limit layer, a strain compensation active layer manufactured on the InGaAs lower waveguide layer, an InGaAs upper waveguide layer manufactured on the strain compensation active layer, a two-dimensional rectangular photonic crystal dot matrix graph manufactured on the InGaAs upper waveguide layer, an InP cover layer manufactured on the InGaAs upper waveguide layer, a contact layer manufactured on the cover layer for forming a secondary epitaxial wafer, V-shaped double channels etched downward from the surface of the secondary epitaxial wafer to the limit layer for forming a slant ridge waveguide, a silicon dioxide layer which is manufactured on the surfaces of the V-shaped double channels and the contact layer, a front electrode manufactured on the surface of the etched secondary epitaxial wafer, a metal layer which is manufactured on the front electrode and fills up the two V-shaped double channels and an alloy electrode manufactured on the backside of the InP substrate, wherein a current injection window is formed in the middle of the silicon dioxide layer on the surface of the contact layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, and mainly relates to a two-dimensional photonic crystal distributed feedback quantum cascade laser (PhC-DFB) manufactured by adopting double-beam holographic multiple exposure technology QCLs) method. Background technique [0002] There are two basic issues to consider when fabricating two-dimensional photonic crystal distributed feedback quantum cascade lasers (PhC-DFB QCLs) with inclined cavity surfaces: one is to prepare a large-area and highly uniform two-dimensional photonic crystal lattice structure; the other is to effectively Confinement front-side metallic electrode-induced waveguide losses in photonic crystal quantum cascade lasers. At present, the lattice preparation of two-dimensional photonic crystal distribution feedback semiconductor lasers with inclined cavity surface is mainly divided into two situations: one is: surface two-dimensional photonic cry...

Claims

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Application Information

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IPC IPC(8): H01S5/34H01S5/343H01S5/223H01S5/065H01S5/028H01S5/024
Inventor 陆全勇张伟王利军刘俊岐李路刘峰奇王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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