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Device and method for generating silicon nitride film

A technology of silicon nitride film and generation device, which is applied in gaseous chemical plating, metal material coating process, coating, etc. Guaranteed build quality results

Active Publication Date: 2011-04-20
FOUNDER MICROELECTRONICS INT
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  • Description
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Problems solved by technology

[0008] The embodiment of the present invention provides a device and method for forming a silicon nitride film, which is used to solve the problem that dichlorodihydrogen silicon is easy to condense in the existing process of producing silicon nitride film, and granular substances are formed in the furnace tube, thereby affecting The problem of the quality of the silicon nitride film produced

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  • Device and method for generating silicon nitride film
  • Device and method for generating silicon nitride film
  • Device and method for generating silicon nitride film

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Embodiment Construction

[0017] The specific implementation of a silicon nitride film forming device and method provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0018] A device for forming a silicon nitride film provided by an embodiment of the present invention includes: a first pipeline for feeding DCS gas, a first pipeline for feeding NH 3 The second pipeline, the third pipeline and the LPCVD reaction chamber; wherein:

[0019] The outer surface of the first pipeline is wrapped with a heating tape, and the first pipeline and the second pipeline are respectively connected to the LPCVD reaction chamber;

[0020] The third pipeline communicates with the first pipeline, and is used to discharge the DCS gas remaining in the first pipeline into the first pipeline after stopping the introduction of DCS gas into the LPCVD reaction chamber. The first gas of the LPCVD reaction chamber.

[0021] A specific example is used below to illustrate ...

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Abstract

The invention discloses a device and a method for generating a silicon nitride film. The device comprises a first pipeline for introducing dichlorosilane (DCS), a second pipeline for introducing ammonia (NH3), a third pipeline communicated with the first pipeline, and a low-pressure chemical vapor deposition (LPCVD) reaction cavity, wherein the first pipeline and the second pipeline are respectively connected with the LPCVD reaction cavity; and the third pipeline is used for introducing a first gas capable of discharging the residual DCS gas in the first pipeline to the LPCVD reaction cavity into the first pipeline after the DCS gas is stopped to be introduced into the LPCVD reaction cavity. The device and the method for generating the silicon nitride film can timely discharge the residual DCS gas in the first pipeline after the LPCVD reaction is ended, avoid the problem that the residual DCS gas in the first pipeline is condensed to enter the LPCVD reaction cavity to form granules attached to the surface of a wafer, and guarantee the quality of the generated silicon nitride film on the surface of the wafer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a device and method for forming a silicon nitride film. Background technique [0002] Silicon nitride (Si 3 N 4 ) film is widely used as a dielectric material in the field of semiconductor manufacturing because of its high dielectric constant. For example, in the process of manufacturing flash memory, a layer of ONO layer is required as between the floating gate (Floating Gate) and the control gate (Control Gate). of dielectric materials. "O" in ONO stands for SiO2 film, and "N" in ONO stands for Si 3 N 4 film. [0003] In addition, the silicon nitride film is not easy to be penetrated by oxygen molecules. Taking advantage of this advantage, it is used as a masking layer to prevent the active area (Active Area) on the wafer surface from being oxidized when the field oxide layer is produced, thus preventing the oxidation of the silicon nitride film. to protect the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/455
Inventor 徐威黄辛庭秦正健
Owner FOUNDER MICROELECTRONICS INT
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