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High-resistance value metal oxide film resistor and manufacture method thereof

A production method and oxide film technology, applied in non-adjustable metal resistors, resistance manufacturing, resistors, etc., can solve problems such as difficult to reach high resistance values, and achieve high precision, stable performance, and large adjustable range.

Inactive Publication Date: 2011-04-13
GUANGDONG FULLDE ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to overcome the defect that the existing above-mentioned resistor and its manufacturing process are difficult to reach a high resistance value, and provide a metal oxide film resistor with a resistance value exceeding 100KΩ and its manufacturing process

Method used

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  • High-resistance value metal oxide film resistor and manufacture method thereof
  • High-resistance value metal oxide film resistor and manufacture method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] First prepare the basic components according to the following weight ratio: Si: 35%, Cr: 50%, Ni: 15%, that is, the total amount of basic components is 100%, and then add 0.1% of the total amount of rare earth elements in the basic components Re, so as to make a good target;

[0020] Then, the prepared target is sputtered on the surface of the ceramic substrate by the vacuum direct current sputtering process to form an inner film, and the sputtering condition is: vacuum degree 2×10 -3 Pa, sputtering power 200W, duration 200 minutes;

[0021] Then, the same target material is sputtered by radio frequency sputtering process on the ceramic substrate formed with the inner film, and the outer film is formed on the inner film. The sputtering conditions are: in the atmosphere of argon and oxygen mixed gas, the pressure is 1×10 -3 Pa, the sputtering power is 400W, and the duration is 20 minutes, wherein the volume ratio of argon to oxygen is 9:1;

[0022] Then, heat-treat th...

Embodiment 2

[0025] First prepare the basic components according to the following weight ratio: Si: 72%, Cr: 25%, Ni: 3%, that is, the total amount of basic components is 100%, and then add 3% of the total amount of rare earth elements in the basic components Re, so as to make a good target;

[0026] Then, the prepared target material is sputtered on the surface of the ceramic substrate by vacuum DC sputtering process to form an inner film, and the sputtering condition is: vacuum degree 5×10 -3 Pa, sputtering power 500W, duration 20 minutes;

[0027] Then, the same target material is sputtered by radio frequency sputtering process on the ceramic substrate formed with the inner film, and the outer film is formed on the inner film. The sputtering conditions are: in the atmosphere of argon and oxygen mixed gas, the pressure is 3×10 -3 Pa, the sputtering power is 600W, and the duration is 10 minutes, wherein the volume ratio of argon to oxygen is 9:1;

[0028] Then, heat-treat the resistor ...

Embodiment 3

[0031] First prepare the basic components according to the following weight ratio: Si: 48%, Cr: 50%, Ni: 2%, that is, the total amount of the basic components is 100%, and then add 2% of the total amount of rare earth elements to the basic components Re, so as to make a good target;

[0032] Then, the prepared target material is sputtered on the surface of the ceramic substrate by the vacuum direct current sputtering process to form an inner film, and the sputtering condition is: vacuum degree 4×10 -3 Pa, sputtering power 400W, duration 100 minutes;

[0033] Then, the same target material is sputtered by radio frequency sputtering process on the ceramic substrate formed with the inner film, and the outer film is formed on the inner film. The sputtering conditions are: in the atmosphere of argon and oxygen mixed gas, the pressure is 2×10 -3 Pa, the sputtering power is 500W, and the duration is 15 minutes, wherein the volume ratio of argon to oxygen is 9:1;

[0034] Then, hea...

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Abstract

The invention relates to the technical fields of electronic components and semiconductors, in particular to a high-resistance value metal oxide film resistor and a manufacture method thereof. The high-resistance value metal oxide film resistor comprises a ceramic matrix, a skin membrane, iron caps and a lead, wherein the skin membrane is formed on the ceramic matrix; the iron caps are positioned in both ends of the ceramic matrix; the skin membrane comprises an inner-layer skin membrane and an outer-layer skin membrane; the inner-layer skin membrane is formed by a target material through vacuum direct current sputtering; and the outer-layer skin membrane is formed by a target material through an ion power supply and radio-frequency sputtering. In the invention, a unique double-layer membrane structure resistor body is manufactured, and the outer-layer skin membrane is a layer of dense metal oxide film actually, has favorable protecting effect on the inner-layer skin membrane and prevents the inner-layer skin membrane from being further oxidized; meanwhile, a parallel connection relation is formed between the inner-layer skin membrane and the outer-layer skin membrane so that a resistance value of the resistor obtains a larger adjustable range; and accordingly, the metal oxide film resistor manufactured by the invention has the advantages of stable performance and high precision, and the resistance value can beyond 100Kohm and is as high as 3.9 megohm.

Description

Technical field: [0001] The invention relates to the technical field of electronic components and semiconductors, in particular to a high-resistance metal oxide film resistor and a manufacturing method thereof. Background technique: [0002] In the electronic industry and semiconductor industry, due to the improvement of device integration and the miniaturization and miniaturization of devices, the high resistance value of components has become an important indicator to replace high-power resistors. The existing technology can only produce products below 100KΩ, "China Applicable technical achievement 93207077" reported the production and performance of a new type of small metal oxide film resistor. Small size requirements for power. Invention content: [0003] The object of the present invention is to overcome the defect that the above-mentioned resistor and its manufacturing process are difficult to achieve high resistance value, and provide a metal oxide film resistor w...

Claims

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Application Information

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IPC IPC(8): H01C7/18H01C17/00H01C17/12
Inventor 李稳根温启源何刚
Owner GUANGDONG FULLDE ELECTRONICS
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