Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing tungsten plunger

A manufacturing method and tungsten plugging technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as reducing device reliability and corroding metal tungsten

Inactive Publication Date: 2011-04-06
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when chemical mechanical polishing (CMP, Chemical Mechanical Polish) is performed to remove excess metal tungsten and the barrier layer, the polishing liquid will penetrate into the tungsten plug through the cavity 104a, such as Image 6 As shown, the polishing liquid is generally acidic or alkaline, and contains a variety of chemical components, which will corrode metal tungsten and reduce the reliability of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing tungsten plunger
  • Method for manufacturing tungsten plunger
  • Method for manufacturing tungsten plunger

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The invention provides a method for manufacturing a tungsten plug, which improves the formation process of the barrier layer. First, the adhesion layer is formed, and then the adhesion layer is nitrided, so that part of the adhesion layer forms a barrier layer, preventing the formation of the barrier layer due to deposition. Too many layers lead to the formation of "bumps" at the corners on both sides of the contact hole opening, thereby eliminating or reducing the internal voids formed during the manufacturing process of the tungsten plug, preventing the polishing liquid from immersing and corroding the tungsten plug during the chemical mechanical polishing process, and improving the performance. Product reliability.

[0035] In order to make the methods, features and advantages of the present invention more comprehensible, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings.

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for manufacturing a tungsten plunger. The method comprises the following steps of: providing a substrate, wherein a dielectric layer is formed on the surface of the substrate, an opening is formed on the dielectric layer, and the substrate is exposed by the opening; forming an adhesive layer on the substrate; nitriding the adhesive layer so that a part of the adhesive layer forms a barrier layer; filling the opening with metal tungsten; and removing the excessive metal tungsten and a part of the barrier layer to form the tungsten plunger. By the method, internal voids formed during the manufacturing of the tungsten plunger are eliminated or reduced, interconnection resistance of the tungsten plunger is reduced, the tungsten plunger is prevented from being immersed and corroded by polishing solution during chemical mechanical polishing, and the reliability of a product is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a tungsten plug. Background technique [0002] With the development of semiconductor technology, the integration level of very large scale integrated circuit chips has reached the scale of hundreds of millions or even billions of devices, and the multilayer metal interconnection technology of more than two layers is widely used. At present, the electrical connection between two different metal layers is realized by forming a via hole in a dielectric layer between the two metal layers and filling it with a conductive material to form a plug structure. The quality of plug formation has a great influence on the performance of the device. If the quality of plug formation is poor, it will increase the interconnection resistance and affect the performance of the device. Metal tungsten is the preferred material for plugs due to its excelle...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/768
Inventor 杨瑞鹏聂佳相何伟业
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com