Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro gas-phase chromatographic column with ultrahigh depth-to-width ratio and MEMS machining method thereof

A micro gas chromatography and aspect ratio technology, which is applied in the field of ultra-high aspect ratio micro gas chromatography column and its MEMS processing, can solve the problems of inability to process, affect production efficiency, slow dry etching etch rate, etc., and achieve improved performance , The effect of simple and easy process

Inactive Publication Date: 2011-04-06
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This means that when the width of the groove is determined, the depth of the groove is also determined, and deeper grooves cannot be processed
Moreover, as the etching progresses to the depth, the etching rate of dry etching becomes slower and slower, which affects production efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro gas-phase chromatographic column with ultrahigh depth-to-width ratio and MEMS machining method thereof
  • Micro gas-phase chromatographic column with ultrahigh depth-to-width ratio and MEMS machining method thereof
  • Micro gas-phase chromatographic column with ultrahigh depth-to-width ratio and MEMS machining method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A five-layer structure of ultra-high aspect ratio spiral micro gas chromatographic column, the bottom layer is glass, the middle layer has three layers, silicon, glass and silicon in turn, and the top layer is glass, using deep reactive ion etching (DRIE dry etching) ) combined with anodic bonding technology for MEMS processing. The processing flow is as follows:

[0029] ①Design and process masks for the bottom layer and top layer respectively, and the patterns on the two masks are mirror-symmetrical as Figure 4 As shown, the width of the spiral gas path groove is 30 μm, the groove interval is 150 μm, and the length is about 50 cm.

[0030] ② Etch the Pyrex7740 glass with the bottom and top mask DRIE, the thickness of the glass is 500 μm, etch to about 250 μm, and use it as the bottom and top layer for backup;

[0031] ③Etch 360μm silicon wafer and 300μm thick Pyrex7740 glass using the underlying mask DRIE, etch through both the silicon wafer and glass, and use it a...

Embodiment 2

[0036] A five-layer structure ultra-high aspect ratio loop-shaped micro gas chromatographic column, the structure of the micro gas chromatographic column is the same as that of Example 1 except that the chromatographic gas flow channel is loop-shaped. Since the linear etching pattern itself has mirror symmetry, only one mask pattern is needed to complete the dry etching of the bottom layer, the middle layer and the top layer. The MEMS processing flow of the column is as follows:

[0037] ①Design and process as Figure 5 As shown in the mask, there are multiple loop patterns on the mask, each loop is an air channel groove, the groove width is 50 μm, the interval is 150 μm, and the total length is about 50 cm;

[0038] ②~⑤: ②~⑤ with embodiment 1;

[0039] ⑥Turn the top layer of glass over along the mirror symmetry axis of its etched pattern, so that the etched surface is upside down on the third intermediate layer, and after it is completely aligned with the pattern of the low...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a micro gas-phase chromatographic column with an ultrahigh depth-to-width ratio and a micro-electromechanical system (MEMS) machining method thereof. The micro gas-phase chromatographic column comprises a bottom layer, a plurality of intermediate layers and a top layer which are formed by a plurality of silicon layers and a plurality of glass layers, wherein a hollow vertical channel with the same pattern is formed in each intermediate layer by dry etching technology; half-etched vertical channels are formed in the bottom layer and the top layer; the bottom layer, the intermediate layers and the top layer are combined by anodic bonding according to a silicon-glass alternative sequence; and the vertical channels in the layers of materials are strictly aligned. The chromatographic column and the method have the advantage that: the deep channels of the layers are laminated layer after layer along the vertical direction by bonding technology; and thus, the depth of the channel is not limited the depth-to-width ratio required by dry etching, and the vertical deep channel with the ultrahigh depth-to-width ratio of over 1mm can be realized so as to greatly improve the performance of a chromatogram.

Description

technical field [0001] The invention relates to the technical field of gas chromatography, in particular to an ultra-high aspect ratio micro gas chromatography column and a MEMS processing method thereof. Background technique [0002] Gas chromatography is a widely used chemical analysis method. In recent years, with the continuous maturity of a series of new technologies such as semiconductor device manufacturing technology and microfabrication technology, the research on small-volume micro-gas chromatography columns has received great attention from people. focus on. [0003] The cross-sectional shape of the gas channel groove of the micro gas chromatography column has a great influence on the performance of the whole device. When the groove cross-section is rectangular, the most critical dimension for column performance is the groove width. The narrow groove is conducive to the rapid distribution of gas molecules in the mobile phase in the stationary phase on the groove...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N30/60B81C1/00
Inventor 杜晓松廖明杰王力熊丽霞谢光忠蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products