Horizontal furnace tube and method for producing in-situ doped polysilicon

Abstract

The invention discloses a horizontal furnace tube and a method for producing in-situ doped polysilicon. In order to solve the problem that the uniformity of the polysilicon is poor when the in-situ doped polysilicon is synthesized in the prior art, the invention discloses the horizontal furnace tube for producing the in-situ doped polysilicon, which comprises a tube body 11 and a reaction cavity 16 surrounded by the tube body 11, a tubular gas injector 15 extends into the reaction cavity 16 in the axial direction of the tube body 11, a plurality of small holes 18 are arranged on a tube wall 17 of the injector 15, and one end 20 of the gas injector far away from the gas injection is sealed. Because phosphorane and silane are uniformly distributed in a cavity of the furnace tube through injecting reaction gas in the injector 15, the thickness uniformity of the in-situ doped polysilicon is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor device production and manufacturing, in particular to a horizontal furnace tube and a method for producing in-situ doped polysilicon. Background technique [0002] In-situ doped polysilicon has been widely used in IC and solar cell production. In today's integrated circuit and solar cell manufacturing, in-situ doped polysilicon is often used as the conductive material of components, such as the conductive layer of gate oxide in CMOS. Its advantage is that it can meet the requirements of different resistivities by adjusting the flow of PH3 and SiH4. Demand, in-situ doped polysilicon In the production process of polysilicon, the two steps of polysilicon deposition and doping are carried out at the same time, so as to meet the requirements of the product. This process has the advantages of controllable resistance and short production cycle. [0003] At present, horizontal furnace tubes are commonly use...

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Problems solved by technology

[0008] In order to solve the problem of poor uniformity of polysilicon when synthesizing in-situ doped polysilicon in the prior art, an embodiment of the present invention provides a horizontal furnace tube for producing in-situ doped polysilicon, including a tube body 11 and a tube body The reaction chamber 16 surrounded by 11, the tubular gas injector 15 extends into the reaction chamber 16 along the axial direction of the pipe body 11, and a plurality of small holes 18 are opened on the pipe wall 17 of the injector 15, and the end 20 away from the gas injection is closed

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