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Pixel structure

A technology of pixel structure and pixel electrode, which is applied in the field of pixel structure with multi-channel area, can solve the problems such as limitation of display aperture ratio of pixel structure, and achieve the effect of avoiding the influence of display aperture ratio and reducing leakage current

Active Publication Date: 2012-03-21
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a pixel structure to solve the problem that the display aperture ratio of the pixel structure is limited by the multi-channel design of polysilicon thin film transistors

Method used

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Embodiment Construction

[0050] figure 2 It is a pixel structure of an embodiment of the present invention. Please refer to figure 2 , the pixel structure 200 is electrically connected to a scan line 210 and a data line 220, wherein the scan line 210 and the data line 220 are arranged alternately. The pixel structure 200, the scan lines 210 and the data lines 220 are, for example, disposed on a substrate (not shown). The pixel structure 200 includes a semiconductor pattern 230 and a pixel electrode 240 . The semiconductor pattern 230 includes at least two channel regions 232A, 232B, at least one doped region 234 , and a source region 236 and a drain region 238 . The channel regions 232A and 232B are located under the scan line 210 , wherein the channel region 232A and the channel region 232B have different width-to-length ratios. The doped region 234 is connected between the channel region 232A and the channel region 232B. The pixel electrode 240 is electrically connected to the drain region 23...

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Abstract

The invention discloses a pixel structure which comprises a scanning line, a data line, a semiconductor pattern, a source region, a drain region and a pixel electrode, wherein the scanning line is provided with a branch; the data line and the scan line are arranged in a staggered mode; the branch is positioned below the data line and overlaps the data line; the semiconductor pattern comprises at least two channel regions positioned below the scanning line, at least one doped region connected between every two channel regions; the pixel electrode is electrically connected with the drain region; the source region is connected between one channel region and the data line; and the drain region is connected between the other channel region and the pixel electrode. By utilizing the changes of the semiconductor pattern, the semiconductor pattern and the scanning line are intersected in at least two regions, thereby being beneficial to reducing the drain current of the polysilicon thin film transistor.

Description

[0001] This application is a divisional application based on the parent application (application number: 2008100010652, the invention name is pixel structure). technical field [0002] The present invention relates to a pixel structure, and in particular to a pixel structure with a multi-channel area. Background technique [0003] Thin Film Transistor Liquid Crystal Display (TFT-LCD) has become the mainstream of many flat panel displays at present. According to the selection of the material of the channel layer, TFT-LCDs can be divided into two types: amorphous silicon TFT-LCDs and low-temperature polysilicon thin-film transistors (Low-Temperature PolySilicon Thin FilmTransistor, LTPS-TFT) LCDs. [0004] Since the electron mobility of low-temperature polysilicon thin film transistors can reach 200cm 2 / V-sec or more, so the area occupied by the thin film transistor can be made smaller to meet the requirement of high aperture ratio (aperture), thereby improving the display b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L23/522G02F1/136
Inventor 萧嘉强罗诚胡至仁
Owner AU OPTRONICS CORP
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