Storage controller and method for controlling data reading

Abstract

The invention provides a storage controller and a method for controlling data reading. The storage controller includes an encoding circuit and a control circuit. The encoding circuit is programmable to support a plurality of different finite fields, and implemented for generating encoded data in one of the plurality of different finite fields according to an adjustable finite field setting. The control circuit is implemented for controlling the adjustable finite field setting of the encoding circuit and recording the encoded data into the storage device according to the encoded data, wherein the encoding circuit includes a plurality of encoders corresponding to the different finite fields, and starts one of the plurality of encoders according to an enabled signal; and the control circuit generates the enabled signal to set the adjustable finite field setting. The storage controller and the method for controlling data reading provided by the invention could meet requirement of different application through dynamically adjusting the error correction ability.

Description

technical field [0001] The present invention relates to a storage controller and a method for controlling data reading, which are used to control recording data to and / or reading data from a storage device, and in particular to a programmable encoding circuit / The memory controller of the decoding circuit and the method of controlling data reading support multiple finite fields, multiple codeword lengths and / or multiple error correction capabilities. Background technique [0002] Error detection and correction techniques are used to effectively correct errors caused by different factors to obtain error-free data. Taking flash memory as an example, continued price / performance improvements in flash memory have made flash the long-term storage choice for many applications. However, flash memory may have defects (eg, defective memory cells) during manufacture, and more defects may occur during use of the device, thus limiting its application. In order to deal with these defect...

AI Technical Summary

Problems solved by technology

Therefore, conventional control chips for MLC flash memory devices only support a single finite field and a single error correction capability required by MLC flash memory devices

That is, the same control chip that supports a single finite field and a single error correction capability cannot be used in different MLC flash memory devices with different page lengths and ECC requirements

[0006] Traditional control chips that support a single finite field and a single error correction capability are inflexible

For example, a control chip using a single and fixed finite field cannot support longer codeword lengths, and when it supports shorter codeword lengths, more parity bits are used, which wastes flash memory spare area of

In addition, the control chip using a single and fixed finite field cannot dynamically adjust the error correction capability as a response to different application requirements

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