Block-based flash memory and its operation method

Abstract

The invention discloses a block-based flash memory and its operation method. Techniques are described herein for managing data in a block-based flash memory device which avoid the need to perform sector erase operations each time data stored in the flash memory device is updated. As a result, a large number of write operations can be performed before a sector erase operation is needed. In addition, the block-based flash memory can emulate both programming and erasing on a byte-by-byte basis, like that provided by an EEPROM.

Description

technical field [0001] The present invention relates to flash memory technology, in particular to block-based flash memory devices and methods of operation thereof. Background technique [0002] Electrically Erasable Programmable Read Only Memory (EEPROM) and flash memory include memory cells that store electrical charge between a channel and the gate of a field effect transistor. The stored charge will affect the threshold voltage of the transistor, and the threshold voltage will be changed according to the stored charge so as to sense the indicating data. One of the most commonly used charge storage memory cells is known as a floating gate memory cell. In a floating gate memory cell, charge is stored in a layer of conductive material between the channel and the gate. Another type of charge storage memory cell is called a charge trapping memory cell, which uses a dielectric layer instead of a floating gate. [0003] The term "programming" as used herein refers to the ope...

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However, it also increases the cost and complexity of the device

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