Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for adjusting Schottky contact barrier height of metal and N-type germanium

A Schottky contact and barrier height technology, applied in semiconductor devices and other directions to achieve low-cost effects

Inactive Publication Date: 2010-12-15
XIAMEN UNIV
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for adjusting the Schottky barrier height of metal and N-type germanium in view of the existing shortcoming of high Schottky barrier height and relatively large contact resistance between metal and N-type germanium. Methods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for adjusting Schottky contact barrier height of metal and N-type germanium
  • Method for adjusting Schottky contact barrier height of metal and N-type germanium
  • Method for adjusting Schottky contact barrier height of metal and N-type germanium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1: figure 1 A schematic flow chart of the preparation of metal / TaN / n-Ge contacts in the present invention is given, wherein: 1 is a germanium substrate; 2 is SiO 2 layer; 3 is a photoresist; 4 is a TaN layer; 5 is a metal layer; 6 is a metal Al layer. Firstly, clean the n-Ge(100) substrate with a resistivity of 0.043Ωcm: first use acetone and ethanol for 10 minutes to remove organic pollutants, repeat this process twice, and clean with cold deionized water; After the N-type substrate was soaked in HCl (36%): H 2 O=1(ml): 4(ml) solution for about 30s, remove oxides and metal impurities, and then wash with cold deionized water, this process needs to be repeated 5 times; then soak the n-Ge soaked in hydrochloric acid solution in HF:H 2 O=1(ml): 50(ml) solution for about 15s, then soak in deionized water for 15s to remove oxides, repeat this process 3 times; finally blow dry with nitrogen (see figure 1 (a)).

[0020] Put the cleaned N-type germanium substrate i...

Embodiment 2

[0022] Embodiment 2: similar to Embodiment 1, the difference is that the metal Ni deposited on the TaN layer is 400 nm, and the deposited TaN thicknesses are 0, 2, 4, 6, 8, 10, 15, and 25 nm, respectively. Finally, a Ni / TaN / n-Ge contact is prepared, and the TaN thickness adjusts the Ni / n-Ge Schottky barrier height, see figure 2 .

Embodiment 3

[0023] Example 3: Similar to Example 2, the difference is that 400 nm of metal Fe is deposited on the TaN layer. Fe / TaN / n-Ge contacts are finally prepared, and the thickness of TaN adjusts the height of the Fe / n-Ge Schottky barrier see figure 2 .

[0024] The present invention firstly cleans the N-type germanium (n-Ge) sheet, and then adopts traditional photolithography and corrosion processes to obtain the window where the metal contacts with the N-type germanium; then, deposits a layer of TaN and One layer of metal; standard photolithographic lift-off process; metal / TaN / n-Ge contacts obtained. During the manufacturing process, the purpose of adjusting the height of the metal / TaN / n-Ge Schottky contact barrier is realized by changing the thickness of TaN.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Resistivityaaaaaaaaaa
Thicknessaaaaaaaaaa
Resistivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for adjusting the Schottky contact barrier height of metal and N-type germanium. The method comprises the following steps of: cleaning the N-type germanium substrate; putting the cleaned N-type germanium substrate into PECVD to deposit a silicon dioxide layer; photoetching the N-type germanium substrate, and removing the silicon dioxide layer to obtain an N-type germanium substrate with a deposited metal window; and putting the treated N-type germanium substrate into a magnetron sputtering machine, depositing a TaN layer on the front of the N-type germanium substrate, depositing a monomer metal layer on the TaN layer, and preparing metal / TaN / n-Ge contact by adopting a lift-off process. The method is a novel method for adjusting the Schottky contact barrier height of the metal / n-Ge, which is simple and compatible with the micro-electronic process and has low cost.

Description

technical field [0001] The invention relates to a method for adjusting the height of the contact barrier between metal and N-type germanium Schottky, in particular to a method for adjusting the metal and N-type germanium by changing the thickness of the intermediate layer by using a metal compound (such as TaN) as an intermediate layer. Schottky contact barrier height method. Background technique [0002] In recent years, the reduction in the feature size of metal-oxide-semiconductor field-effect transistors (MOSFETs) using high-k gate dielectrics has approached its physical limit, making germanium materials with high electron and hole mobility the next generation of integrated circuits. One of the popular candidate materials. At present, people have made great progress in germanium pMOSFET devices, but have encountered many difficulties in nMOSFETs. Recent studies have shown that one of the main reasons for limiting the performance of germanium-based nMOSFET devices is th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/28
Inventor 李成吴政赖虹凯陈松岩
Owner XIAMEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com