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Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system

A technology of epitaxial wafer and uniformity, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of mutual influence of temperature, unstable control of temperature and uniformity, and temperature uniformity of epitaxial wafer 400 Stability is difficult to guarantee and other problems, to achieve the effect of accurate measurement and guaranteed accuracy

Active Publication Date: 2010-12-08
JIANGSU ZHONGSHENG SEMICON EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, even if the temperature uniformity of the tray 100 is stably controlled, the stability of the temperature uniformity of the epitaxial wafer 400 is difficult to guarantee.
[0016] Finally, the relevant temperature 201, 202, 203 feedback of the above-mentioned tray 100 is independent of the feedback of the epitaxial wafer temperature 204, and the heating elements 301, 302, 303 that respectively perform power adjustment will affect each other on the temperature of the epitaxial wafer 400. Causes instability in its temperature and uniformity control

Method used

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  • Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system
  • Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system
  • Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system

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Embodiment 1

[0054] The device for controlling the temperature and uniformity of the epitaxial wafer 40 described in this embodiment is especially suitable for smaller-sized epitaxial wafers 40 with a diameter of 3 inches or less. Take 2 inches as an example, see image 3 , Figure 4 As shown, the device comprises a circular tray 10 ( image 3 ), correspondingly place 2-inch epitaxial wafers 40 in the plurality of concave discs 11, so that they are distributed and arranged in 4 annular regions with the same center but increasing radius on the upper surface of the tray 10 ( Figure 4 ), so that 54 epitaxial wafers 40 placed simultaneously on one tray 10 can be subjected to MOCVD coating treatment of multilayer epitaxial lattice structure thin films.

[0055] Cooperate see Figure 4 to Figure 6 As shown, a heater 30 is arranged below the tray 10, including 4 ring-shaped resistive heating elements 31 concentrically arranged ( Figure 5 ), each annular heating element 31 passes through the...

Embodiment 2

[0072] The device for controlling the temperature and uniformity of the epitaxial wafer 40 described in this embodiment is especially suitable for larger-sized epitaxial wafers 40 with a diameter of 4 inches or more. Cooperate see Figure 8 , Figure 9 As shown, similar to the above-mentioned embodiment, the device comprises a circular tray 10 ( Figure 8 ), a plurality of epitaxial wafers 40 with a diameter of 4 inches are correspondingly placed in the plurality of concave disks 11, so that they are distributed and arranged in two ring-shaped areas with the same center but increasing radii on the upper surface of the tray 10 ( Figure 9 ), so that 15 epitaxial wafers 40 placed simultaneously on one tray 10 can be subjected to MOCVD deposition treatment of multilayer epitaxial lattice structure thin films.

[0073] Cooperate see Figure 9 to Figure 11 As shown, a heater 30 is arranged under the tray 10 and is connected to at least one contact thermocouple thermometer 22 to ...

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Abstract

The invention discloses a device for controlling temperature and uniformity of epitaxial wafers in an MOCVD (metal organometallic chemistry vapor deposition) system. A group of non-contact optical thermometers is arranged above a tray along the radial direction to feed back the temperature of single or a plurality of epitaxial wafers in a plurality of annular areas. A temperature controller independently controls the power output of a plurality of heating elements below the tray by using difference minimization of a statistical average value of the temperatures of the epitaxial wafers and an epitaxial process specified temperature as a target. The plurality of epitaxial wafers in each annular area are correspondingly heated by using one or more lower adjacent heating elements which are arranged annularly and have small radial coverage area so as to effectively balance the radial heat loss of the epitaxial wafers and the tray under the process condition of different temperatures and realize accurate and stable control of the temperature and the uniformly between the single epitaxial wafers and the adjacent epitaxial wafers. The device is also provided with a contact thermocouple thermometer for measuring a heater temperature serving as a reference point of the epitaxial process specified temperature and meanwhile monitoring whether the heater works normally.

Description

technical field [0001] The invention relates to a MOCVD (metal organic chemical vapor deposition) system and its control method for producing compound semiconductor optoelectronic devices, in particular to the device and method for controlling the temperature and uniformity of epitaxial wafers. Background technique [0002] Metal organic chemical vapor deposition (hereinafter referred to as MOCVD) is a process of forming semiconductor devices such as light-emitting diodes (LEDs) by depositing one layer or continuously depositing multiple layers of epitaxial lattice structure films on epitaxial wafers. The performance and yield rate of the normal distribution of the device such as wavelength (color), brightness and pre-voltage are directly determined by the quality, thickness and uniformity of material composition of each layer of epitaxial film on the epitaxial wafer (or called substrate substrate). The uniformity of the epitaxial film is directly related to the temperature ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C16/458
Inventor 陈爱华金小亮
Owner JIANGSU ZHONGSHENG SEMICON EQUIP
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