Method for forming through holes on base material and base material with through holes

A technology of through-holes and substrates, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., and can solve problems such as incomplete consistency, inconsistent capacitance, and uneven thickness

Active Publication Date: 2010-11-17
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the thickness of the insulating layer 14 on the sidewalls of the trenches 13 has a problem of non-uniformity, that is, the thickness of the insulating layer 14 on the sidewalls above the trenches 13 is different from the thickness of the insulating layer 14 on the sidewalls of the trenches 13. The thickness of the insulating layer 14 on the lower sidewall will not be exactly the same
As a result, the inconsistency of the capacitance

Method used

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  • Method for forming through holes on base material and base material with through holes
  • Method for forming through holes on base material and base material with through holes
  • Method for forming through holes on base material and base material with through holes

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Embodiment Construction

[0105] reference Figure 4 to Figure 21 , Showing a schematic diagram of the first embodiment of the method for forming via holes on a substrate of the present invention. First, refer to Figure 4 and Figure 5 ,among them Figure 4 Is the top view of the substrate, Figure 5 for Figure 4 Section along line 5-5 in the middle. A substrate 21 is provided, and the substrate 21 has a first surface 211 and a second surface 212. The substrate 21 can be a silicon substrate or a wafer. Next, a slot 231 is formed on the first surface 211 of the substrate 21. The slot 231 has a side wall 232 and a bottom surface 233. In this embodiment, a first photoresist layer 241 is formed on the substrate 21. The first surface 211 is formed on the first photoresist layer 241 with a first opening 242.

[0106] Next, refer to Image 6 According to the first opening 242, a groove 231 is formed on the substrate 21 by etching. The slot 231 is located on the first surface 211 of the substrate 21 and has a...

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Abstract

The invention relates to a method for forming through holes on a base material and the base material with the through holes. The method for forming the through holes on the base material comprises the following steps of: (a) providing the base material, wherein the base material is provided with a first surface and a second surface; (b) forming a slot on the first surface of a substrate, wherein the slot is provided with a side wall and a bottom surface; (c) forming a first conductive metal on the side wall and the bottom surface of the slot so as to form a center slot; (d) forming a center insulating material on the center slot; (e) forming a ring slot on the base material, wherein the ring slot encloses the first conductive metal; (f) forming a first insulating material in the ring slot; and (g) removing the second surface of partial base material so as to expose the first conductive metal, the center insulating material and the first insulating material. Therefore, thicker insulating materials can be formed in the through holes, and the insulating materials do not have the problem of uneven thicknesses in the through holes.

Description

Technical field [0001] The present invention relates to a method for forming a through hole on a substrate and a substrate with a through hole. In detail, it relates to a method for forming an insulating layer on the sidewall of a through hole using a polymer and A substrate with the through hole. Background technique [0002] Referring to FIGS. 1 to 3, a schematic diagram of a known method of forming a via hole on a substrate is shown. First, referring to FIG. 1, a substrate 1 is provided. The substrate 1 has a first surface 11 and a second surface 12. Next, a number of grooves 13 are formed on the first surface 11 of the substrate 1. Then, an insulating layer 14 is formed on the sidewalls of the trenches 13 by using a chemical vapor deposition (CVD) method, and a plurality of accommodating spaces 15 are formed. The material of the insulating layer 14 is usually silicon dioxide. [0003] Next, referring to FIG. 2, a conductive metal 16 is filled in the accommodating spaces 15....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L23/13H01L23/498
Inventor 王盟仁
Owner ADVANCED SEMICON ENG INC
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