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Process for the production of medium and high purity silicon from metallurgical grade silicon

A technology of metallurgical grade silicon and purity, applied in chemical instruments and methods, self-solidification method, silicon compound, etc., can solve the problems of not removing boron, not removing phosphorus, etc.

Active Publication Date: 2010-10-20
费罗格洛布创新有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, neither boron nor phosphorus was removed by this method

Method used

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  • Process for the production of medium and high purity silicon from metallurgical grade silicon
  • Process for the production of medium and high purity silicon from metallurgical grade silicon
  • Process for the production of medium and high purity silicon from metallurgical grade silicon

Examples

Experimental program
Comparison scheme
Effect test

example

[0094] [Fe] solid =(1-0.50)·0.0000064·[Fe]liquid +0.50·[Fe] liquid = 0.50 [Fe] liquid

[0095] [P] solid =(1-0.50)·0.35·[P] liquid +0.50·[P] liquid = 0.68 [P] liquid

[0096] [B] solid =(1-0.50)·0.80·[B] liquid +0.50 [B] liquid =0.90·[B] liquid

[0097] Table 1

[0098] element

k eff

Al

Ca

co

Cr

Cu

Fe

Mg

mn

Mo

Ni

P

Ti

V

Zr

B

0.50

0.50

0.50

0.50

0.50

0.50

0.50

0.50

0.50

0.50

0.68

0.50

0.50

0.50

0.90

[0099] A purification efficiency of about 50% was obtained for most elements (except boron and phosphorus). In fact, approximately 30% of the phosphorus and 10% of the boron can be removed by the applicant's technique of large-mode segregation by directional solidification without electromagnetic stirring.

[0100] Distribution (segregation) coefficient (k eff ) remains the same during solidification, however, the composit...

Embodiment

[0118] The applicant wishes to obtain the iron concentration in solid and in liquid by solidification of 70% silicon melt (solidification time: 4.5 hours). The amount of liquid silicon was 5.0 mt and the composition of liquid silicon included 0.35% Fe.

[0119] k sol Fe = f ( k eff Fe , f s )

[0120] obtained from Figure 5 .

[0121] By considering the mass distribution, the applicant obtains:

[0122] k liq Fe = 1 - k sol Fe · f s 1 - f s = 1...

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PUM

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Abstract

A process for purifying low-purity metallurgical grade silicon, containing at least one contaminant and obtaining a higher-purity solid polycrystalline silicon is provided. The process includes containing a melt of low-purity metallurgical grade silicon in a mould having insulated bottom and side walls, and an open top; solidifying the melt by unidirectional solidification from the open top towards the bottom wall while electromagnetically stirring the melt; controlling a rate of the unidirectional solidification; stopping the unidirectional solidification when the melt has partially solidified to produce an ingot having an exterior shell including the higher-purity solid polycrystalline silicon and a center including an impurity-enriched liquid silicon; and creating an opening in the exterior shell of the ingot to outflow the impurity-enriched liquid silicon and leave the exterior shell which has the higher-purity solid polycrystalline silicon.

Description

technical field [0001] The present invention relates generally to the preparation of silicon metal and, more particularly, to a method of producing medium and / or high purity silicon metal for optoelectronic applications by purification by crystallization. Background technique [0002] Silicon (Si) has many different applications, each with its own specific technical specifications. [0003] Most of the world production of metallurgical grade silicon goes to the steel and automotive industries, where it is used as a vital alloying component. Metallurgical grade silicon is low purity silicon. Typically, carbon (coal, charcoal, pet coke) and silica (SiO 2 ) to produce metallurgical grade silicon, ie silicon with a purity of about 98%. [0004] A small amount of metallurgical-grade Si is transferred to the semiconductor industry for the production of Si wafers, etc. However, the semiconductor industry requires ultra-high purity silicon, eg, electronic grade silicon (EG-Si) w...

Claims

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Application Information

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IPC IPC(8): C01B33/037
CPCC30B28/06C30B11/006C30B29/06C01B33/037
Inventor 多米尼克·勒布朗勒内·布瓦韦尔
Owner 费罗格洛布创新有限公司
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