Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

P-type Zn4Sb3 based thermoelectric material and preparation method thereof

A thermoelectric material, p-type technology, applied in the field of p-type Zn4Sb3-based thermoelectric material and its preparation, semiconductor thermoelectric power generation and refrigeration materials, can solve the complex phase diagram and other problems, achieve excellent thermoelectric performance, shorten the preparation cycle, and shorten the preparation cycle Effect

Inactive Publication Date: 2010-10-13
WUHAN UNIV OF TECH
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The phase diagram of the Zn-Sb system is very complex, and there are phase transition reactions at 492, 460, 437, 414, 407 and 350 °C, respectively and The bulk effect of these phase transition reactions leads to the Zn 4 Sb 3 A large number of macro- and micro-cracks produced by the compound during high-temperature dense sintering have always been a bottleneck problem affecting the electrothermal transport characteristics and mechanical properties of this type of material.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • P-type Zn4Sb3 based thermoelectric material and preparation method thereof
  • P-type Zn4Sb3 based thermoelectric material and preparation method thereof
  • P-type Zn4Sb3 based thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Example 1: p-type Zn 4 Sb 3 Material

[0033] (1) According to the nominal composition, it is Zn 4 Sb 3 The stoichiometric ratio accurately weighs 4.1725g of high-purity Zn powder (purity 99.999%) and Sb powder (purity 99.99%) 5.8281g, puts the two kinds of raw materials into a mortar and grinds them, fully mixes them evenly, and then seals them in a vacuum less than 10 -1 In a vacuum quartz tube of MPa;

[0034] (2) Place the above-mentioned vacuum quartz tube in a programmable temperature-controlled melting furnace, and raise the temperature from room temperature to 650°C at a rate of 2°C / min. After vacuum melting for 1 hour, the master alloy melt is quenched in oil to obtain Zn 4 Sb 3 Quenched castings of master alloys;

[0035] (3) The above-mentioned Zn 4 Sb 3 The quenched casting of the master alloy is ground and passed through a 400-mesh sieve to obtain Zn 4 Sb 3 quenched powder of the master alloy and fill the quenched powder into the inner diameter ...

Embodiment 2

[0038] Example 2: p-type Zn 3.94 In 0.06 Sb 3 Material

[0039] (1) According to the nominal composition, it is Zn 3.94 In 0.06 Sb 3 The stoichiometric ratio of high-purity Zn powder (purity 99.999%) 4.0906g, Sb powder (purity 99.99%) 5.8006g and In powder (purity 99.99%) 0.1094g are accurately weighed, three kinds of raw materials are put into mortar and ground, Mix well, then seal in a vacuum of less than 10 -1 In a vacuum quartz tube of MPa;

[0040] (2) Place the above-mentioned vacuum quartz tube in a programmable temperature-controlled melting furnace, raise the temperature from room temperature to 675°C at a rate of 4°C / min, and after vacuum melting for 1.5 hours, the master alloy melt is quenched in ice-water to obtain Zn 3.94 In 0.06 Sb 3 Quenched castings of master alloys;

[0041] (3) The above-mentioned Zn 3.94 In 0.06 Sb 3 The quenched casting of the master alloy is ground and passed through a 400-mesh sieve to obtain Zn 3.94 In 0.06 Sb 3 quenched...

Embodiment 3

[0044] Example 3: p-type Zn 3.95 Cd 0.05 Sb 3 Material

[0045] (1) According to the nominal composition, it is Zn 3.95 Cd 0.05 Sb 3 The stoichiometric ratio of high-purity Zn powder (purity 99.999%) 4.1050g, Sb powder (purity 99.99%) 5.8063g and Cd grain (purity 99.95%) 0.0894g are accurately weighed, three kinds of raw materials are put into mortar and ground, Mix well, then seal in a vacuum of less than 10 -1 In a vacuum quartz tube of MPa;

[0046] (2) Place the above-mentioned vacuum quartz tube in a programmable temperature-controlled melting furnace, and raise the temperature from room temperature to 700°C at a rate of 6°C / min. After vacuum melting for 2 hours, the master alloy melt is quenched in brine to obtain Zn 3.95 Cd 0.05 Sb 3 Quenched castings of master alloys;

[0047] (3) The above-mentioned Zn 3.95 Cd 0.05 Sb 3 The quenched casting of the master alloy is ground and passed through a 400-mesh sieve to obtain Zn 3.95 Cd 0.05 Sb 3 quenched powder ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thermal conductanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to a p-type Zn4Sb3 based thermoelectric material and a preparation method thereof, which belongs to the field of thermoelectric conversion new-energy materials. The chemical formula of the thermoelectric material is (Zn4-xTx) 4 (Sb3-yMy) 3, wherein T is an element In, Cd, Mg or Pb, and x is the doped stoichiometric ratio of T and has the range of 0 < / = x < / = 0.2; and M is Te, Sn or In, and y is the doped stoichiometric ratio of M and has the range of 0< / = y< / =0.2. A preparation method of fusing mother alloy at high temperature, quenching a melt and quenching the mother alloy via sintering discharging plasma under the protection of vacuum or inert gas is adopted. The ZT value of the prepared undoped p-type Zn4Sb3 thermoelectric material reaches 0.88, the ZT value of the doped material can be further improved, and the material can be used in the field of thermoelectric conversion power generation or refrigeration. The preparation method has the characteristics of simple process, short preparation cycle and low energy consumption, and is suitable for industrial production.

Description

technical field [0001] The invention relates to a semiconductor thermoelectric power generation and refrigeration material, especially a p-type Zn 4 Sb 3 The invention relates to a base thermoelectric material and a preparation method thereof, belonging to the field of thermoelectric conversion new energy materials. Background technique [0002] Thermoelectric conversion technology is a technology that utilizes the Seebeck effect and Peltier effect of semiconductor materials to realize direct mutual conversion of heat energy and electric energy. The thermoelectric conversion system has the advantages of no pollution, no noise, small size, and high reliability. It has broad application prospects in the fields of thermoelectric power generation, refrigeration, solar energy, and industrial waste heat utilization. It has been successfully used as a special power supply and high-precision temperature controller. High-tech fields such as deep space exploration, military equipmen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C22C12/00C22C1/03
Inventor 赵文俞程苏丹马兵张清杰
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com