CMOS (Complementary Metal Oxide Semiconductor) random number generator

A technology of random number generator and flip-flop, applied in random number generator and other directions, can solve the problems of insufficient noise, high power consumption, multi-energy, etc., to reduce power consumption, low power consumption, and solve the problem of low power consumption. Effect

Active Publication Date: 2010-09-15
NATIONZ TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A random number generator composed of ordinary CMOS transistors as a noise source consumes a lot of power
Because the noise of ordinary CMOS tubes is not large enough, complex circuits are needed to effectively amplify the noise to a usable range, so more energy is consumed

Method used

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  • CMOS (Complementary Metal Oxide Semiconductor) random number generator
  • CMOS (Complementary Metal Oxide Semiconductor) random number generator
  • CMOS (Complementary Metal Oxide Semiconductor) random number generator

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Embodiment Construction

[0024] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0025] figure 1 A block diagram of a CMOS (Complementary Metal Oxide Semiconductor) random number generator provided by the present invention. like figure 1 As shown, the CMOS random number generator includes three parts: a bias circuit 1, a double-drain CMOS tube noise current source 2, and a control circuit 3. Among them, the bias circuit 1 is used to provide a DC operating point for the double-drain CMOS tube noise current source 2; the double-drain CMOS tube noise current source 2 uses a double-drain CMOS (complementary metal oxide layer semiconductor) tube to generate a noise current signal and output; the control circuit 3 is used to convert the noise current signal generated by the double-drain CMOS tube no...

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PUM

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Abstract

The invention discloses a CMOS (Complementary Metal Oxide Semiconductor) random number generator with low power consumption, which comprises an offset circuit, a double-drain CMOS noise current source and a control circuit, wherein the offset circuit is used for providing a direct current working point for the double-drain CMOS noise current source; the double-drain CMOS noise current source generates a noise current signal by utilizing a double-drain CMOS; and the control circuit is used for converting the noise current signal output by the double-drain CMOS noise current source into a random sequence to be output, detecting the noise current signal and controlling the output of the double-drain CMOS noise current source or stopping outputting the noise current signal according to a detection result. The invention greatly lowers the power consumption of a random number generator by utilizing the characteristic of large noise of the double-drain CMOS, and is suitable for a radio frequency identification label chip.

Description

technical field [0001] The invention relates to a random number generator, in particular to a low-power consumption CMOS random number generator used by a radio frequency identification tag chip. Background technique [0002] Radio frequency identification is a non-contact automatic identification technology, which automatically identifies target objects and obtains relevant data through radio frequency signals. The random number generator is a very important part of the anti-collision algorithm of the RFID tag. The methods usually used for random number generation include resistance or ordinary CMOS tube noise amplification, high and low frequency sampling, chaos algorithm, etc. [0003] RFID tags have very strict requirements on power consumption, especially passive RFID tags, whose power comes from the radio wave energy received by the antenna, and the power consumption of each unit is generally lower than 1μW. Random number generators that use ordinary CMOS transistors...

Claims

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Application Information

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IPC IPC(8): G06F7/58
Inventor 孙迎彤周盛华
Owner NATIONZ TECH INC
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