Method for improving efficiency of solar cell

A solar cell and efficiency technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as reducing the self-absorption of silicon quantum dots, and achieve the effect of improving efficiency

Active Publication Date: 2012-07-25
ZHEJIANG UNIV
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Problems solved by technology

This reduces the possibility of silicon quantum dots self-absorbing during light conversion

Method used

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  • Method for improving efficiency of solar cell
  • Method for improving efficiency of solar cell

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Effect test

Embodiment 1

[0022] The 2.5nm silicon quantum dots whose surface was passivated by hydrogen were obtained from the plasma preparation system of silicon quantum dots. The standard deviation of the size distribution of silicon quantum dots is 10% of the mean size. Put the silicon quantum dots in a mixture of trimethylbenzene and n-dodecene (the volume ratio of trimethylbenzene and n-dodecene is 10:7), and carry out a hydrosilylation reaction at a temperature of 220°C until the mixed solution becomes clear . Thereby obtaining silicon quantum dots with 12 carbon organic molecular chains on the surface. The surface-modified silicon quantum dots were separated from the mixture by centrifugation, and then dispersed in toluene. The resulting silicon ink concentration was 150 g / L. Silicon quantum dots in silicon ink are excited by light with a wavelength of 325 nanometers, and the fluorescence emitted is mainly concentrated in the region near the wavelength of 600 nanometers, and the fluorescenc...

Embodiment 2

[0024] 3nm silicon quantum dots whose surface was passivated by hydrogen were obtained from the plasma preparation system of silicon quantum dots. The standard deviation of the size distribution of silicon quantum dots is 15% of the mean size. The silicon quantum dots are placed in a mixed solution of ethanol and acrylic acid (the volume ratio of ethanol and acrylic acid is 3:1), and a hydrosilylation reaction is carried out under ultraviolet radiation until the mixed solution becomes clear. Thus, silicon quantum dots with polyacrylic acid attached to the surface are obtained. The surface-modified silicon quantum dots are separated from the mixed solution by centrifugation, and then dispersed in water. The resulting silicon ink concentration was 120 g / L. Silicon quantum dots in the silicon ink are excited by light with a wavelength of 325 nanometers, and the fluorescence emitted is mainly concentrated in the region near the wavelength of 680 nanometers, and the fluorescence ...

Embodiment 3

[0026] 7nm silicon quantum dots whose surface was passivated by hydrogen were obtained from the plasma preparation system of silicon quantum dots. The standard deviation of the size distribution of silicon quantum dots is 30% of the mean size. Put silicon quantum dots in air and they oxidize naturally at room temperature. After 70 days of natural oxidation, put the silicon quantum dots with an oxide film on the surface into a mixed solution of ethanol and water (the volume ratio of ethanol and water is 5:2), and use a shear emulsifier to disperse the silicon quantum dots as much as possible. When the shear rate is 2000r / min and the reaction temperature is 70°C, add 25% mass ratio of silane coupling agent CH 2 =C(CH 3 )COO(CH 2 ) 3 Si(OCH 3 ) 3 , the pH value of the system was adjusted to about 4 with oxalic acid solution, and the surface-modified silicon quantum dots were obtained after 3 hours of reaction. After centrifugation, the silicon quantum dots were redispersed...

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Abstract

The invention discloses a method for improving the efficiency of a solar cell. The method is realized by attaching silicon quantum dots of which the surfaces are modified to the surface of a work area of the solar cell. The method comprises the following steps: modifying the surfaces of the silicon quantum dots; dispersing the silicon quantum dots into a solvent to prepare silicon ink; and printing the silicon ink on the surface of the work area of the solar cell to attach the silicon quantum dots of which the surface are modified to the surface of the work area of the solar cell. The method has the advantages that: a silicon element in a selected raw material has large content in the earth crust, and is easy to obtain and non-toxic. Simultaneously, due to the utilization of the silicon quantum dots, the efficiency of the solar cell is remarkably improved and environment pollution is avoided.

Description

technical field [0001] The invention relates to the field of photoelectric materials, in particular to a method for improving solar cell efficiency by attaching surface-modified silicon quantum dots on the surface of a solar cell working area. Background technique [0002] With the development of the global economy, the consumption of energy has increased dramatically. Currently, the vast majority of energy is obtained by burning fossil fuels. Extensive use of fossil fuels has resulted in the emission of a large amount of carbon dioxide and other gases into the atmosphere, causing serious environmental problems. Therefore, the development and utilization of various renewable energy sources has received more and more attention from the international community. Among all kinds of renewable energy, solar energy has become the focus of development because of its inexhaustible, inexhaustible, pollution-free, and convenient features. The utilization of solar energy mainly inclu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCY02E10/50Y02P70/50
Inventor 皮孝东李庆杨德仁
Owner ZHEJIANG UNIV
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