An n-p Complementary Schottky Diode Structure

Abstract

An N-P complementary Schottky diode structure, including an N-type Schottky diode and a P-type Schottky diode on the same semiconductor substrate, wherein the N-type Schottky diode structure includes a lightly doped well region directly The contact metal silicide, while the P-type Schottky diode does not include a metal silicide layer. The N-P complementary Schottky diode structure provided by the present invention is compared with the N-P complementary Schottky diodes that both traditional N and P Schottky diodes include a metal silicide layer or do not include a metal silicide layer, and overcome the oxidation of metal materials. The impact on the characteristics of the N-type Schottky junction, while overcoming the influence of metal silicide on the characteristics of the P-type Schottky junction, to achieve low power consumption technical indicators, so that both N and P Schottky diodes have excellent positive Direct and reverse characteristics, improve the performance of N-P complementary Schottky diodes.

Description

technical field [0001] The invention relates to a semiconductor diode device, in particular to an N-P complementary Schottky diode structure, belonging to the technical field of semiconductors. Background technique [0002] The Schottky diode is a two-terminal semiconductor device developed based on the metal-semiconductor contact theory of semiconductor physics. Schottky diodes have low forward voltage drop, short reverse recovery time, fast switching speed, small noise figure, small series resistance, good high-frequency characteristics and switching characteristics. Using the nonlinear resistance of Schottky diodes, they can also be used as Used in microwave mixers; as varactor diodes, it can be used in parametric amplifiers; in ultra-high-speed logic circuits, it can be used as fast clamping diodes; Schottky diodes are widely used in various high-frequency, microwave and high-speed circuits, Schott Base diodes are also particularly suitable for switching power supplies....

AI Technical Summary

Problems solved by technology

However, this technical solution is only effective for improving the performance of N-type Schottky diodes. For P-type Schottky diodes, the introduction of metal silicide will affect its forward and reverse characteristics, resulting in high power consumption. Affects the performance of Schottky diodes

[0005] In the existing semiconductor technology, due to the limitation of the processing technology, the N-type Schottky diode and the P-type Schottky diode on the same semiconductor substrate usually contain a metal silicide layer, or neither contain a metal silicide layer , which seriously affects the overall performance of N-P complementary Schottky diodes

Images