Trench type metal-oxide semiconductor device and manufacture method thereof

Abstract

The invention relates to a manufacture method of a trench type metal-oxide semiconductor device. On a grid dielectric layer, a first polycrystalline silicon layer is deposited along the inner wall of a grid trench. Then, a first conductivity type dopant is implanted to the first polycrystalline silicon layer located at the bottom of the grid trench. Subsequently, a second polycrystalline silicon layer doped with a second conductivity type dopant is deposited to cover the first polycrystalline silicon layer. Subsequently, a high-temperature process is applied to enable the dopants in the firstpolycrystalline silicon layer and the second polycrystalline silicon layer to diffuse, and thereby, a first conductivity type first doping area and a second conductivity type second doping area whichare arranged at the bottom of the grid trench are formed.

Description

Technical field [0001] The invention relates to a channel type metal oxide semiconductor device and a manufacturing method thereof, in particular to a channel type metal oxide semiconductor device with low gate capacitance (Cgd) and a manufacturing method thereof. Background technique [0002] Compared with the traditional planar metal oxide semiconductor device, the current flow is along the direction parallel to the surface of the substrate. The channel metal oxide semiconductor device sets the gate in the channel to change the channel of the metal oxide semiconductor device. Position so that the current flow of the metal oxide semiconductor device is perpendicular to the substrate. Therefore, the size of the component can be reduced, the enthusiasm of the component can be improved, and the manufacturing cost can be reduced. Common metal oxide semiconductor devices on the market include metal oxide semiconductor field effect transistors (MOSFET), insulated gate diode transisto...

AI Technical Summary

Problems solved by technology

However, in order to reduce the capacitance value from the gate to the drain of the metal oxide semiconductor device, the complexity of the process of the metal oxide semiconductor device is often greatly increased, resulting in an increase in the production cost.

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