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Method and device for accurately detecting and correcting parallelism of ion beam

A technology of parallelism and ion beams, which is applied in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc., can solve the problems that the injection angle cannot be precisely controlled, and cannot meet the requirements of the semiconductor device manufacturing process, etc. Effect

Inactive Publication Date: 2010-06-30
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
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Problems solved by technology

The ion beam implanter is one of the most critical doping equipment in semiconductor device manufacturing. When the device manufacturing process enters the era of feature size below 100nm and wafer size above 200mm, the traditional multi-wafer batch target ion implanter due to its implantation angle Without precise control, it can no longer meet the requirements of the semiconductor device manufacturing process

Method used

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  • Method and device for accurately detecting and correcting parallelism of ion beam
  • Method and device for accurately detecting and correcting parallelism of ion beam
  • Method and device for accurately detecting and correcting parallelism of ion beam

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Embodiment

[0041] A set of scanning ion beam parallelism detection and correction data was recorded according to the above method, as shown in Table 1 below. In the embodiment, the ion implanter injects B+ ions, the implantation energy is set to 50keV, and the ion beam current is adjusted between 1mA~5mA. First, the ion source system and beamline system are automatically adjusted, and the required ion beam current is set. Then use a method and device for accurately detecting and correcting the parallelism of the scanning ion beam according to the present invention to detect and correct the parallelism of the scanning ion beam, obtain the correction data value of the parallelism of the scanning ion beam, and adjust the current setting of the magnet power supply . It can be seen from Table 1 that the parallelism of the scanning ion beam generally undergoes 3 to 5 repeated calibration processes, and the angle of each incident point of the scanning ion beam can be within 90°±0.7°, Δθ=θ 1 -θ...

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Abstract

The invention discloses a method and a device for accurately detecting and correcting parallelism of an ion beam, relates to an ion implantation machine, and belongs to the field of semiconductor integrated circuit device manufacturing. The device for detecting and correcting the parallelism comprises a parallelism correcting magnet, a correcting magnet power supply, a moving Faraday cup, a sampling Faraday cup, a dosage detector, a digital scanning generator, a motor motion controller, and a control computer. The parallelism correcting magnet is arranged at a proper position behind an electrostatic scanning plate, and a magnet exciting coil of the parallelism correcting magnet is connected with the correcting magnet power supply. The output of the sampling Faraday cup is connected with the dosage detector; the output of the digital scanning generator is connected with a scanning amplifier and the scanning amplifier is connected with the electrostatic scanning plate. The output of the motor motion controller is connected with a drive motor of the moving Faraday cup. The moving Faraday cup is driven by the drive motor and is capable of moving along the X horizontal direction in a target chamber. The correcting magnet power supply, the moving Faraday cup, the sampling Faraday cup, the dosage detector, the digital scanning generator, the motor motion controller are connected with the control computer, and are coordinated and controlled by the computer. The method for detecting and correcting the parallelism of the ion beam comprises the following steps of data detection, data processing, parameter adjustment, and the like. Error data of the parallelism of the ion beam is detected by moving the Faraday cup back and forth, and the parallelism of the scanning ion beam reaches an error range by adjusting the setting current of the magnet power supply repeatedly. The method and the device can automatically realize accurate detection and correction of the parallelism.

Description

technical field [0001] The invention relates to a method and a device for accurately correcting the parallelism of scanning ion beams, in particular to a single wafer target table ion implanter, which belongs to the field of semiconductor device manufacturing. Background technique [0002] As the semiconductor integrated circuit manufacturing process becomes more and more miniaturized, the performance requirements for semiconductor manufacturing equipment are also getting higher and higher. Ion beam implanter is one of the most critical doping equipment in semiconductor device manufacturing. When the device manufacturing process enters the era of feature size below 100nm and wafer size above 200mm, the traditional multi-wafer batch target ion implanter due to its implantation angle Without precise control, it can no longer meet the requirements of the semiconductor device manufacturing process. When the device manufacturing process enters the technical node with a feature s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/244H01L21/00H01L21/265
Inventor 邱小莎钟新华龙会跃
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP
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