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System for making polysilicon with assistance of hydrogen plasmas and method therefor

A plasma and polysilicon technology, applied in chemical instruments and methods, polycrystalline material growth, silicon, etc., can solve the problems of low thermal cracking efficiency, complex tail gas components, and high separation costs, so as to reduce energy consumption and shorten reaction deposition time , the effect of reducing the reaction temperature

Inactive Publication Date: 2012-05-30
JIANGSU ZHONGNENG POLYSILICON TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, this method has the following disadvantages: 1, the efficiency of thermal cracking is low, part of trichlorosilane is converted into silicon tetrachloride in the cracking process, and the ratio of trichlorosilane into polysilicon is less than 50%. Chlorosilane can only get polysilicon below 100g
After the separation of silicon tetrachloride, trichlorosilane is re-synthesized as a raw material. This cycle consumes energy and electricity and is inefficient.
2. The tail gas produced by the cracking process has complex components and high separation costs

Method used

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  • System for making polysilicon with assistance of hydrogen plasmas and method therefor
  • System for making polysilicon with assistance of hydrogen plasmas and method therefor
  • System for making polysilicon with assistance of hydrogen plasmas and method therefor

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Effect test

Embodiment 1

[0032] 1) A high-purity silicon core rod with a resistivity of 20Ω·cm is used.

[0033] 2) The ICP generating device used has a frequency of 40.68MHz and a power of 100kW.

[0034] 3) The air pressure in the plasma generator and the reduction furnace is controlled at 0.95 bar.

[0035] 4) The raw material gas is a gas mixture of dichlorosilane and silicon tetrachloride with a volume ratio of 1:2.

[0036] 5) Connect the above-mentioned silicon core to the electrodes of the chassis in the reduction furnace structure of the present invention. When starting the furnace, first pass through the plasma transformed by mixing hydrogen and auxiliary gas to heat up the silicon core to about 400 ° C. Then apply a voltage to the electrode to form a current in the silicon core, and continue to heat up to 600°C, then gradually cut off the auxiliary gas feed and mix the raw gas with hydrogen through a gas mixer before passing it into the plasma generator. The hydrogen flow rate is controlled...

Embodiment 2

[0038] 1) A high-purity silicon core rod with a resistivity of 50Ω·cm is used.

[0039] 2) The ICP generating device used has a frequency of 40.68MHz and a power of 100kW.

[0040] 3) The air pressure in the plasma generator and the reduction furnace is controlled at 0.95 bar.

[0041] 4) The raw material gas is a gas mixture of dichlorosilane and silicon tetrachloride with a volume ratio of 1:5.

[0042] 5) Connect the above-mentioned silicon core to the electrode of the chassis in the reduction furnace structure of the present invention. When starting the furnace, first pass through the plasma transformed by mixing hydrogen and auxiliary gas to heat up the silicon core to about 500 ° C. Then load current on the electrodes and continue to heat up to 700°C. The hydrogen flow rate was controlled to be 40 cubic meters per hour, and then deposited for 100 hours to obtain silicon rods with a diameter of 120 mm.

Embodiment 3

[0044] 1) A high-purity silicon core rod with a resistivity of 70Ω·cm is used.

[0045] 2) The ICP generating device used has a frequency of 40.68MHz and a power of 100kW.

[0046] 3) The air pressure in the plasma generator and the reduction furnace is controlled at 0.95 bar.

[0047] 4) The raw material gas is a gas mixture with a volume ratio of dichlorosilane and silicon tetrachloride of 1:8.

[0048] 5) Connect the above-mentioned silicon core to the electrode of the bottom plate in the reduction furnace structure of the present invention, and when starting the furnace, first pass through the plasma converted from the mixture of hydrogen and auxiliary gas to heat up the silicon core to about 600°C, And continue to heat up to 800 ° C, and then feed the raw material gas. The hydrogen flow rate was controlled to be 30 cubic meters per hour, and then deposited for 100 hours to obtain silicon rods with a diameter of 100 mm.

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Abstract

The invention discloses a method for making polysilicon by using hydrogen plasmas, wherein the method includes that one or more of dichlorosilane, silicochloroform and silicon tetrachloride is (are) used as the raw gas; hydrogen is used as the reducing gas; or one or more of helium, neon, argon and krypton is (are) used as the assistant gas; the assistant gas and the raw gas are mixed and then transformed into plasmas in a plasma generator; the plasmas are conveyed into a reducing furnace and deposited to make polysilicon ingots on a silicon core in the reducing furnace. In addition, the invention also discloses the polysilicon reducing furnace applying the method. Compared with the prior art, the invention obviously reduces the reaction temperature, improves the once through yield of the polysilicon and the deposition rate of silicon rods, and greatly reduces the energy consumption; a high-voltage device for high voltage start is saved due to adoption of the plasmas, and the system is started easily at low voltage; and the constant voltage operation in the reducing furnace can be realized. Integrating the system and the method, the invention reduces the production cost and the probability of potential safety hazard remarkably.

Description

technical field [0001] The present invention relates to a polysilicon manufacturing method and system, more specifically to a polysilicon production system and manufacturing method utilizing hydrogen plasma assistance combined with a Siemens method. Background technique [0002] As we all know, the rapid development of information and control technology in the world today relies on various device chips made of silicon wafers, and the original material of silicon wafers is polysilicon. [0003] At present, the production method of polysilicon generally adopts the Siemens improved process, smelting and purifying quartz sand in an electric arc furnace to 98% to produce industrial silicon, and then crushing the industrial silicon and mixing it with anhydrous HCl at a temperature of about 300°C. The reaction in the fluidized bed reactor generates easily soluble SiHCl3, and at the same time forms a gaseous mixture (H2, HCl, SiHCl3, SiCl4, Si). The above-mentioned gaseous mixture ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/03C30B29/06
Inventor 陈涵斌钟真武陈其国陈文龙王小军王燕
Owner JIANGSU ZHONGNENG POLYSILICON TECH DEV
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