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Thermoelectric materials

A thermoelectric material, low temperature technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device, circuit, etc., can solve the problems of low sensitivity, low noise, low thermal conductivity, low Seebeck coefficient, and weakened thermoelectric performance. The effect of low thermal conductivity and good thermoelectric properties

Inactive Publication Date: 2010-06-16
KOREA ELECTROTECH RES INST
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Problems solved by technology

Compared with other metal substances, the above-mentioned metal thermoelectric materials have lower thermal conductivity and higher Seebeck coefficient, but higher specific resistance, so when used in thermal sensors and other fields, the sensitivity is low and a lot of noise is generated
[0009] Existing thermoelectric materials are mainly used in low-temperature regions (below 100°C), and their thermoelectric properties will weaken when they enter the medium-temperature region (100°C-300°C)

Method used

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Embodiment Construction

[0021] The present invention relates to a medium and low temperature thermoelectric material for thermoelectric elements suitable for thermoelectric cooling and thermoelectric power generation. The medium and low temperature thermoelectric material is formed by adding specific components to metal thermoelectric materials or semiconductor thermoelectric materials. Thermoelectric materials for medium and low temperature in the medium and low temperature region. The above "for medium and low temperature" means that it not only exhibits excellent thermoelectric performance in the low temperature range below 100°C, but also exhibits excellent thermoelectric performance in the middle temperature range of about 100°C-300°C.

[0022] The above-mentioned metal thermoelectric materials add group 6(VI b) elements to well-known thermoelectric materials such as chalcogen-based Bi or Pb compounds, and the Bi 2 Te 3 , PbTe or Bi 2 Te 3 , PbTe and other substances are added with semi-metal...

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Abstract

Disclosed herein is a thermoelectric material for intermediate- and low-temperature applications, in which any one or a mixture of two or more selected from among La, Sc and MM is added to a Ag-containing metallic thermoelectric material or semiconductor thermoelectric material. The thermoelectric material has a low thermal diffusivity, a high Seebeck coefficient, a low specific resistivity, a high power factor and a low thermal conductivity, and thus has a high dimensionless figure of merit, thus showing very excellent thermoelectric properties. The thermoelectric material provide thermoelectric sensors having high sensitivity and low noise and, in addition, is widely used as a thermoelectric material for intermediate- and low-temperature applications, because it shows excellent thermoelectric performance in the intermediate- and low-temperature range.

Description

technical field [0001] The invention relates to a thermoelectric material, in particular to a thermoelectric material for medium and low temperature with good thermoelectric performance. Background technique [0002] Generally speaking, thermoelectric conversion technology includes two application fields: thermoelectric cooling and thermoelectric power generation. Thermoelectric cooling mainly utilizes the Peltier effect in which heat moves from one side of the thermoelectric conversion material to the other when an electric current is applied, and thermoelectric power generation mainly utilizes the Seebeck effect in which an electromotive force is generated when a temperature difference occurs between the two ends of the conversion material. The development of thermoelectric cooling focuses on cooling effect rather than energy utilization, so many application fields have been expanded and extensive research has been carried out; It is difficult to secure economic efficienc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/14H01L35/16H10N10/00H10N10/851H10N10/854H10N10/852
CPCH01L35/16H10N10/852C22C12/00H10N10/00
Inventor 朴秀东李熙雄金峯瑞吴旻旭
Owner KOREA ELECTROTECH RES INST
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