Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for recovering indium and tin from ITO waste target materials on basis of distillation

A distillation method and target technology, which are applied in the field of comprehensive recovery of indium and tin, and can solve the problems of loss and low recovery rate of indium.

Inactive Publication Date: 2010-05-05
南京中锗科技有限责任公司
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the process of using indium plate to replace tin from the ITO hydrochloric acid leaching solution can separate indium tin to obtain qualified crude indium, the recovery rate of indium is low. This process was basically eliminated in 2002.
The current process is hydrochloric acid leaching and oxidant oxidation to separate indium tin by precipitation of tin. The recovery rate of indium can be stabilized at more than 97%. The obtained crude indium can be electrolyzed once to obtain qualified 4N (99.99%) indium; this process has tin oxide slag Indium still contains a small amount of indium, and there is little room for further increase in the yield of indium. When the tin slag produced is sold as tin raw material, the indium contained in it will be lost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for recovering indium and tin from ITO waste target materials on basis of distillation
  • Method for recovering indium and tin from ITO waste target materials on basis of distillation
  • Method for recovering indium and tin from ITO waste target materials on basis of distillation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The technical solutions of the present invention will be further described below through specific examples.

[0013] 1. Principle

[0014] SnCl at atmospheric pressure 4 The boiling point is 113°C, InCl 3 Sublimation begins at about 148-440°C (different documents InCl 3 The sublimation temperature is inconsistent, in order to reduce the distillation loss of indium, 148 ° C is used as a reference). Using SnCl 4 has a lower boiling point and is compatible with InCl 3 There is a certain interval between the sublimation temperature, consider distilling it with InCl 3 Separation so as to achieve the purpose of indium tin separation.

[0015] The reaction of ITO powder and hydrochloric acid is:

[0016] In 2 o 3 +6HCl=2InCl 3 +3H 2 o

[0017] SnO 2 +4HCl=SnCl 4 +2H 2 o

[0018] First leaching the ITO powder with hydrochloric acid, taking the leaching clear liquid for direct distillation, and controlling the temperature so that the SnCl 4 Distillation and sepa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an experiment on the assumption that indium (In) and tin (Sn) are separated from the hydrochloric acid (HCl) leaching solution of ITO (indium tin oxide) in a distillation manner and confirms that the optimum condition of distillation is to distill at 130 DEG C for 6h. According to the results, the satisfying indium / tin separation effect and indium recovery rate can be achieved by adopting the open-type distillation under the optimum condition of distillation.

Description

technical field [0001] The invention relates to a method for comprehensively recovering indium tin from waste ITO targets by a distillation method. Background technique [0002] Indium is an important scattered metal element, and its compounds are widely used in semiconductor, electronics industry, atomic energy industry, etc. Among them, indium tin oxide (ITO) is the largest consumption of indium, accounting for more than 70% of the total consumption. The leftovers, chips and waste products produced during the production of ITO powder targets, as well as the targets after sputtering coating, are the largest sources of secondary resources of indium. [0003] The key to recovering indium from waste ITO targets is to consider the separation of indium tin and the quality and yield of crude indium. Although the process of using indium plates to replace tin from the ITO hydrochloric acid leaching solution can separate indium tin to obtain qualified crude indium, the recovery ra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C22B7/00C22B3/10C22B3/22C22B3/46C22B25/06C22B58/00
CPCY02P10/20
Inventor 汪洋黄兴灯唐琴
Owner 南京中锗科技有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com