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Washing method of monocrystalline/polycrystalline silicon chips

A technique for polycrystalline silicon wafers and silicon wafers, applied in liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., which can solve problems such as environmental pollution and increased production costs

Active Publication Date: 2010-05-05
ZHEJIANG HAINA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will not only increase the production cost, but also the acid used in pickling will pollute the environment

Method used

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  • Washing method of monocrystalline/polycrystalline silicon chips
  • Washing method of monocrystalline/polycrystalline silicon chips

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1, a kind of cleaning method of monocrystalline / polycrystalline silicon chip, carries out following steps successively:

[0040] Each of the following steps 1) to 6) uses a specific cleaning tank, that is, step 1) uses 1# cleaning tank, step 2) uses 2# cleaning tank, step 3) uses 3# cleaning tank, and step 4 ) use 4# cleaning tank, step 5) use 5# cleaning tank, and step 6) use 6# cleaning tank.

[0041] The volumes of the 1# cleaning tank to the 6# cleaning tank are all 45L.

[0042] 1), Rough cleaning (using 1# cleaning tank):

[0043] Insert the ground silicon wafers into the PFA flower basket first. The PFA flower basket can be the 25-piece PFA flower basket produced by entergrits. Then put the PFA flower basket loaded with silicon wafers into the washing basket 4 of the 1# cleaning tank, and deionized water is housed in the tank body 3 of the 1# cleaning tank. The entire PFA flower basket is immersed in deionized water, and the up and down shaking freq...

Embodiment 2

[0061] Embodiment 2, a kind of cleaning method of monocrystalline / polycrystalline silicon chip, carries out following steps successively:

[0062] 1), Rough cleaning (using 1# cleaning tank):

[0063] Change the up and down shaking frequency of the rocking arm 2 to 90 times / minute, and the ultrasonic frequency to 20KHz; change the rough cleaning time to 20 minutes, and the rest are the same as in Example 1.

[0064] 2), soaking (using 2# cleaning tank):

[0065] Concentration is housed in the tank body 3 of this 2# cleaning tank and is the KOH solution of 5%, and soaking time is 2 minutes. All the other are with embodiment 1.

[0066] 3), cleaning (using 3# cleaning tank):

[0067] Set the up and down shaking frequency of the rocking arm 2 to 80 times / minute, the ultrasonic frequency to 20KHz; the cleaning time to 20 minutes; the rest are the same as in Example 1.

[0068] 4), alkali washing (using 4# cleaning tank):

[0069] The tank body 3 of this 4# cleaning tank is eq...

Embodiment 3

[0078] Embodiment 3, a kind of cleaning method of monocrystalline / polycrystalline silicon chip, carries out following steps successively:

[0079] 1), Rough cleaning (using 1# cleaning tank):

[0080] Change the up and down shaking frequency of the rocking arm 2 to 90 times / minute, change the ultrasonic frequency to 100KHz; change the rough cleaning time to 2 minutes, and the rest are the same as in Example 1.

[0081] 2), soaking (using 2# cleaning tank):

[0082] Concentration is housed in the tank body 3 of this 2# cleaning tank and is the KOH solution of 3%, and soaking time is 15 minutes. All the other are with embodiment 1.

[0083] 3), cleaning (using 3# cleaning tank):

[0084] Set the up and down shaking frequency of the rocking arm 2 to 80 times / minute, the ultrasonic frequency to 100KHz; the cleaning time to 2 minutes; the rest are the same as in Example 1.

[0085] 4), alkali washing (using 4# cleaning tank):

[0086] The tank body 3 of this 4# cleaning tank i...

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Abstract

The invention discloses a washing method of monocrystalline / polycrystalline silicon chips, comprising the following steps of: firstly immersing the silicon chips into deionized water for rough washing under the action of ultrasonic waves; then removing into an inorganic base dilute solution for soaking; then immersing into the deionized water for washing under the action of the ultrasonic waves; then immersing into a flowing inorganic base solution for base washing under the action of the ultrasonic waves; then immersing into flowing deionized water for washing again under the action of the ultrasonic waves; then immersing into the flowing deionized water again for rinsing under the action of ultrasonic waves at room temperature; and finally drying the silicon chips. The monocrystalline / polycrystalline silicon chips washed by the washing method have high surface cleanliness.

Description

technical field [0001] The invention relates to a method for cleaning monocrystalline or polycrystalline silicon wafers used in semiconductors and solar energy. Background technique [0002] Single crystal and polycrystalline silicon wafers refer to silicon material products with a certain plane obtained by cutting and grinding silicon single crystal or polycrystalline materials; Strong surface adsorption, so the surface of the silicon wafer is often easy to absorb various impurities, such as cutting mortar, grinding sand, organic impurities, inorganic impurities, metal ions and silicon powder, etc., causing the surface of the silicon wafer to easily change, bluish, and Black and other phenomena, thus affecting the subsequent device production. [0003] At present, most of the conventional cleaning methods are soaked in cleaning solution and ultrasonic cleaning. The function of the cleaning solution is to reduce the adsorption capacity of the surface of the silicon wafer, ...

Claims

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Application Information

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IPC IPC(8): B08B3/08B08B3/12
Inventor 吴雄杰高海军饶伟星王飞尧肖型奎赵文辉
Owner ZHEJIANG HAINA SEMICON CO LTD
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