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Silicon-carbon separation method for polysilicon carbon head materials

A polysilicon carbon and separation method technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of low separation efficiency, high cost of polysilicon, large loss of polysilicon, etc., achieve complete separation, controllable separation efficiency, The effect of separation process safety

Inactive Publication Date: 2011-04-13
隋聚勇
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the current separation process of carbon head material, the loss of polysilicon is large, the separation efficiency is low, and the cost of separating polysilicon is very high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] Preparation of separation liquid: nitric acid with a mass concentration of 50% and sulfuric acid with a mass concentration of 98% are added in a weight ratio of 1:0.5 and mixed uniformly.

[0012] Silicon carbon separation: including silicon carbon separation, cleaning and surface treatment steps. The silicon carbon separation step is to put 50Kg polycrystalline silicon carbon head material into the mesh bag and put it into 100Kg separation liquid, mix it under airtight or ventilated conditions and fully soak it for 1 hour; the cleaning step is to take out the silicon carbon separation from the separation liquid After the polysilicon carbon head material, the powdered graphite is rinsed with water; the surface treatment step is to put the polysilicon that has been washed with water in the cleaning step to remove the graphite and soak it in a liquid alkali solution with a mass concentration of 5% for 5 minutes, and put it in a mass concentration after taking it out. Wash...

Embodiment 2

[0014] The separation liquid preparation method is with embodiment 1.

[0015] Silicon carbon separation: including silicon carbon separation, cleaning and surface treatment steps. The silicon carbon separation step is to put 100Kg of polycrystalline silicon carbon head material into a mesh bag and put it into 100Kg of separation liquid, mix it under airtight or ventilated conditions and fully Soak for 3 hours; the cleaning step is to take out the polysilicon carbon head material after the silicon-carbon separation from the separation liquid, and rinse the powdered graphite with water; the surface treatment step is to put the polysilicon with a mass concentration of 8 % of liquid caustic soda solution for 8 minutes, take it out and put it into an analytically pure hydrochloric acid solution with a mass concentration of 10% to wash for 3 minutes, and then rinse with deionized water until the surface pH is 5.0-7.0, which can fully realize the separation of polysilicon and graphit...

Embodiment 3

[0017] The separation liquid preparation method is with embodiment 1.

[0018] Silicon carbon separation: including silicon carbon separation, cleaning and surface treatment steps. The silicon carbon separation step is to put 200Kg of polycrystalline silicon carbon head material into a mesh bag and put it into 100Kg of separation liquid, mix it under airtight or ventilated conditions and fully Soak for 8 hours; the cleaning step is to take out the polycrystalline silicon carbon head material after silicon carbon separation from the separation liquid, and rinse the pulverized graphite with water; % of liquid caustic soda solution for 10 minutes, take it out and put it into an analytically pure hydrochloric acid solution with a mass concentration of 20% to wash for 5 minutes, and then rinse with deionized water until the surface pH is 5.0-7.0, which can fully realize the separation of polysilicon and graphite. separate.

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PUM

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Abstract

The invention relates to a silicon-carbon separation method for polysilicon carbon head materials, which comprises the steps of silicon-carbon separation, cleaning and surface treatment, wherein in the silicon-carbon separation step, the carbon head materials are loaded into a mesh bag and then put into separation liquid in a weight ratio of the separation liquid to the polysilicon carbon head materials being 100:(50-200), and the carbon head materials are mixed under sealing or ventilating condition and are fully soaked for 0.5 to 8 hours; and in the surface treatment step, polysilicon afterthe cleaning step and removal of graphite is soaked in 5 to 10 mass percent solution of caustic soda liquid for 5 to 10 minutes, cleaned in 5 to 20 mass percent solution of pure hydrochloric acid for1 to 5 minutes, and then washed with deionized water until the surface pH is between 5.0 and 7.0, so that the separation of the polysilicon and the graphite can be completely realized. The method hassafe process, and controllable silicon-carbon separation efficiency.

Description

technical field [0001] The invention relates to a preparation method of polysilicon, in particular to a method for separating silicon and carbon of polysilicon carbon head material. Background technique [0002] During the production of raw polysilicon, due to the limitations of the technology used, some carbon heads will be produced. If the graphite and silicon in the carbon head material can be completely separated, the use value of this part of polysilicon will be restored and the heavy burden on the environment caused by the formed waste will be avoided. However, in the current separation process of carbon head material, the loss of polysilicon is large, the separation efficiency is low, and the cost of separating polysilicon is very high. Contents of the invention [0003] The object of the present invention is to provide a method for separating silicon and carbon of polycrystalline silicon and carbon heads to solve the above-mentioned deficiencies. [0004] The tec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/021C01B33/037
Inventor 隋聚勇
Owner 隋聚勇
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