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Semiconductor process unit and focusing ring thereof

A technology of process equipment and focus ring, applied in semiconductor/solid-state device manufacturing, discharge tube, electrical components, etc., can solve problems such as affecting process quality, deposit warping or avalanche, large operating temperature difference, etc.

Inactive Publication Date: 2010-01-13
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Generally speaking, the polymer and other accompanying process products generated during the process will be deposited on the aforementioned focus ring, however, due to the material characteristics of the deposit are different from the focus ring (usually quartz material), the deposit is usually not easy to adhere On the focus ring; on the other hand, since the deposits tend to be stacked into a continuous large-area block structure as the process progresses, and the operating temperature difference in the process is very large, the deposits are easy to expand during thermal expansion and contraction. Under the circumstances, there will be warping or falling off, which will seriously affect the quality of workmanship

Method used

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  • Semiconductor process unit and focusing ring thereof
  • Semiconductor process unit and focusing ring thereof
  • Semiconductor process unit and focusing ring thereof

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Embodiment Construction

[0027] In order to make the above-mentioned objects, features and advantages of the present invention more comprehensible, preferred embodiments are specifically described below together with the attached drawings.

[0028] First, please also refer to figure 1 , figure 2 ,in figure 2 is along figure 1 Sectional view of X1-X2 in the middle.

[0029] Such as figure 2 As shown, the semiconductor process device according to an embodiment of the present invention mainly includes a circular focus ring R and an electrostatic chuck E (Electro-Static Chuck). The above-mentioned focus ring R and electrostatic chuck E are both arranged in a process reaction chamber, wherein A semiconductor wafer W is accommodated in a circular opening R2 in the center of the focus ring R, and an electrostatic chuck E is disposed below the focus ring R for fixing the semiconductor wafer W.

[0030] In this embodiment, there is an annular plane R1 on the periphery of the opening R2 of the focus rin...

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PUM

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Abstract

The invention discloses a focusing ring, which comprises an opening, an annular plane and a groove, wherein the opening is used for accommodating a semiconductor wafer; the annular plane surrounds the opening; and in particular, the groove is arranged on the annular plane in a mode of surrounding the annular plane. The focusing ring can prohibit contamination caused by the tilting of a deposited matter or the falling of the deposited matter from the focusing ring, thus the acceptance rate of the process can be greatly improved.

Description

technical field [0001] The present invention relates to a semiconductor process device, in particular to a semiconductor process device with a focus ring. Background technique [0002] In the conventional semiconductor process, in order to make the plasma and the process gas in the reaction chamber act on the wafer surface effectively and uniformly, a focus ring is usually arranged around the wafer. [0003] Generally speaking, the polymer and other accompanying process products generated during the process will be deposited on the aforementioned focus ring, however, due to the material characteristics of the deposit are different from the focus ring (usually quartz material), the deposit is usually not easy to adhere On the focus ring; on the other hand, since the deposits tend to be stacked into a continuous large-area block structure as the process progresses, and the operating temperature difference in the process is very large, the deposits are easy to expand during the...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01J37/32
Inventor 李翔麟
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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