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Method of replenishing indium ions in indium electroplating compositions

A composition and technology of indium ions, applied in the field of supplementing indium ions, can solve problems such as inability to accurately know the concentration of additives

Active Publication Date: 2011-06-08
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the concentration of a particular additive cannot be precisely known, and the level of that additive in the electroplating composition can be reduced to a level where the additive is not within an acceptable range

Method used

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  • Method of replenishing indium ions in indium electroplating compositions
  • Method of replenishing indium ions in indium electroplating compositions
  • Method of replenishing indium ions in indium electroplating compositions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment I

[0064] Embodiment 1 (comparative example)

[0065] Prepare the following aqueous indium compositions:

[0066] Table 1

[0067] components

content

Indium ion ( 3+ ) (from indium sulfate)

60g / L

Methanesulfonic acid

30g / L

Imidazole-epichlorohydrin copolymer 1

100g / L

water

to the desired volume

pH

1

[0068] 1. Lugalvan TM IZE, obtained from BASF (IZE contains 48-50 wt% copolymer)

[0069] The indium composition was used to deposit an indium layer on a copper plate. The indium electroplating composition was maintained at a pH of 1 and a temperature of 60°C. The pH was adjusted with KOH. The initial S.G. was measured to be 1.16. The specific gravity is measured with a conventional gas density meter. The composition was continuously stirred during indium metal plating. The cathode current density is maintained at 10A / dm 2 , and the indium deposition rate was 1 μm in 20 seconds. A copper pl...

Embodiment II

[0072] The following aqueous indium electroplating compositions were prepared:

[0073] Table 2

[0074] components

content

Indium ion ( 3+ ) (from indium sulfate)

60g / L

Methanesulfonic acid

30g / L

Imidazole-epichlorohydrin copolymer 2

100g / L

water

to the desired volume

[0075] pH

1

[0076] 2. Lugalvan TM IZE, obtained from BASF (IZE contains 48-50 wt% copolymer)

[0077] The indium composition was used to deposit an indium layer on a copper plate. The indium electroplating composition was maintained at a pH of 1 and a temperature of 60°C. The initial S.G. was measured to be 1.165. The composition was continuously stirred during indium metal plating. The cathode current density is maintained at 10A / dm 2 , and the indium deposition rate was 1 μm in 20 seconds. A copper plate served as the cathode, and the anode was a Metakem shielded insoluble anode of titanium and mixed oxides. ...

Embodiment III

[0080] The following aqueous indium electroplating compositions were prepared:

[0081] table 3

[0082] components

content

Indium ion ( 3+ ) (from indium sulfate)

30g / L

Methanesulfonic acid

30g / L

Imidazole-epichlorohydrin copolymer 3

100g / L

water

to the desired volume

pH

1

[0083] 3. Lugalvan TM IZE, obtained from BASF (IZE contains 48-50 wt% copolymer)

[0084] The indium composition was used to deposit an indium layer on a copper plate. The indium electroplating composition was maintained at a pH of 1 and a temperature of 60°C. The initial S.G. was measured to be 1.09. The composition was continuously stirred during indium metal plating. The cathode current density is maintained at 2A / dm 2 , and the indium deposition rate is 0.6 μm in 1 minute. A copper plate served as the cathode, and the anode was a Metakem shielded insoluble anode of titanium and mixed oxides. During deposition of ...

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Abstract

Methods of replenishing indium ions in indium electroplating compositions are disclosed. Indium ions are replenished during electroplating using indium salts of certain weak acids. The method may be used with soluble and insoluble anodes, and comprises the steps of: (a) providing a composition containing one or more Indium ions; (b) electroplating indium on the substrate; and (C) replenishing theindium ions with one or more of indium acetate, indium formate and indium oxalic to the composition during electroplating.

Description

technical field [0001] The invention relates to a method for supplementing indium ions in an indium electroplating composition, more specifically, the invention relates to a method for supplementing indium ions in an indium electroplating composition by using an indium salt of a specific weak acid. Background technique [0002] Indium is a highly desired metal in many industries due to its unique physical properties. For example, it is soft enough that it easily deforms and fills the microstructure between two mating parts, it has a low melting point (156°C) and high thermal conductivity (about 82W / mK). The aforementioned properties enable indium to be used in a variety of applications in electronics and related industries; however, indium is a challenging metal for electroplating. Indium electroplating compositions are sensitive to decomposition products of additives, counter anions, and the buildup of excess indium which generally renders the electroplating composition un...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/54
CPCC25D3/54C25D17/10C25D21/18C25D17/00
Inventor E·佐克斯F·J·施瓦格T·加伊斯克
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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