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Method for preparing zirconium tungstate film

A technology of zirconium tungstate and thin film, which is applied in the direction of solid-state chemical plating, metal material coating process, coating, etc., can solve the problems of complex operation and high cost, and achieve the effect of simple equipment, low cost and simple preparation process

Inactive Publication Date: 2009-10-07
HARBIN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problems of complex operation and high cost in the existing zirconium tungstate film preparation method, and propose a preparation method of zirconium tungstate film

Method used

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  • Method for preparing zirconium tungstate film
  • Method for preparing zirconium tungstate film
  • Method for preparing zirconium tungstate film

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specific Embodiment approach 1

[0009] Specific Embodiment 1: The preparation method of zirconium tungstate film in this embodiment is carried out according to the following steps: 1. Add 0.82-1.92 g of zirconium oxynitrate to 5-15 mL of solvent, and stir at 50-80 °C for 5-10 minutes to obtain A solution; wherein the solvent is acetic acid, propanol, isopropanol, methanol, ethylene glycol, acetic acid or ethylene glycol methyl ether; 2. Mix 0.95-3.25g complexing agent, 15-25mL solvent and 1.15-3.92g Mix ammonium metatungstate evenly to obtain solution B, in which the complexing agent is citric acid, ethylenediaminetetraacetic acid or oxalic acid, and the solvent is acetic acid, propanol, isopropanol, methanol, ethylene glycol, acetic acid or ethylene glycol methyl ether 3. Mix A solution and B solution evenly, and age at 35-60°C for 1-3 days to obtain a sol; 4. Add the sol prepared in step 3 onto the substrate dropwise. Add 0.02-0.08mL of sol dropwise, and spin-coat at 3000-4000r / min for 5-15s to obtain a we...

specific Embodiment approach 2

[0011] Embodiment 2: This embodiment differs from Embodiment 1 in that in Step 1, 1-1.6 g of zirconyl nitrate is added to 7-13 mL of solvent. Other steps and parameters are the same as those in the first embodiment.

specific Embodiment approach 3

[0012] Embodiment 3: This embodiment is different from Embodiment 1 in that in step 1, 1.5 g of zirconyl nitrate is added to 10 mL of solvent. Other steps and parameters are the same as those in the first embodiment.

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Abstract

A method preparing zirconium tungstate film belongs to the field of film preparing. The invention settles the problems of complex operation and high cost existing in prior method for preparing zirconium tungstate film. The method of the invention comprises the following steps: 1. mixing zirconyl nitrate and dissolvent for obtaining a solution A; 2. mixing complexing agent, dissolvent and ammonium metatungstate for obtaining a solution B; 3. mixing A and B for preparing colloidal sol; 4. preparing a wet film through spin coating, and then presintering the wet film; 5. preparing amorphous film of zirconium tungstate; and 6. obtaining the zirconium tungstate film after crystallizing the amorphous film of zirconium tungstate. The method for preparing zirconium tungstate film according to the invention has the advantages of simple preparing process and low cost. The obtained film has the advantages of smooth and compact surface, uniform thickness and uniform crystalline size.

Description

technical field [0001] The invention belongs to the field of film preparation, and in particular relates to a preparation method of a zirconium tungstate film. Background technique [0002] Cubic phase zirconium tungstate is one of the current research hotspots of negative expansion materials. It always maintains negative thermal expansion characteristics in the temperature range of 0.3-1050K, has a high negative expansion coefficient, and is isotropic. These excellent properties have laid a good foundation for the wide application of zirconium tungstate. It can be combined with positive thermal expansion materials to form low thermal expansion or zero expansion materials, which are used in high-precision optical microscopes or electronic equipment, such as: precise light focusing and optical path alignment for telescopes, laser equipment, optical fiber communication systems, etc. It is not affected by temperature fluctuations, and can also be used as precision optical mirr...

Claims

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Application Information

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IPC IPC(8): C23C20/08
Inventor 李刚李锦州柳宁
Owner HARBIN NORMAL UNIVERSITY
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