Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and memory device realizing loss balance of memory device

A storage device, wear leveling technology, applied in information storage, static memory, read-only memory, etc., can solve problems such as overuse and low storage units, and achieve the effect of avoiding overuse

Inactive Publication Date: 2009-09-16
BEIJING WATCH DATA SYST
View PDF0 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] Embodiments of the present invention provide a wear leveling method in a storage device and a storage device, which are used to solve the problem of excessive use of storage units in a storage device in the prior art with relatively low complexity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and memory device realizing loss balance of memory device
  • Method and memory device realizing loss balance of memory device
  • Method and memory device realizing loss balance of memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to prevent a certain storage unit in the storage device from being overused, thereby achieving the purpose of wear balance, an embodiment of the present invention provides a method for wear balance in the storage device. In this method, the logical storage unit number is stored in the storage device The corresponding relationship with the physical storage unit number, for example, the first logical storage unit number corresponds to the first physical storage unit number, and when the number of data erase and write operations of the first physical storage unit exceeds a preset threshold, the first logical storage unit The first physical storage unit number corresponding to the unit number is updated to the second physical storage unit number, and the number of data erasing and writing operations of the second physical storage unit is less than a preset threshold.

[0026] see figure 1 The method for leveling wear in a storage device provided by an embodiment of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An embodiment of the invention discloses a method of loss balance in a memory device. The corresponding relation between a logical memory unit number and a physical memory unit number is memorized in the memory device. The method is as follows: the statistical results for data erasing operation times of a first physical memory unit are read, and the first physical memory unit is the physical memory unit identified by a first physical memory unit number corresponding to a first logical memory unit number in the corresponding relation; when the statistical result is over a preset threshold value, the first physical memory unit number corresponding to the first logical memory unit number is updated to be a second physical memory unit number, and the number of times for data erasing operations of a second physical memory unit identified by the second physical memory unit number is less than the threshold value. The application of the invention can dynamically adjust the corresponding relation between the logical memory unit number and the physical memory unit number so as to achieve the purpose of loss balance in memory device.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a method for realizing wear balance of a storage device and a storage device. Background technique [0002] Generally speaking, the service life of a storage device is determined by the maximum number of erasable and writable times of a storage unit. As the number of times of erasing and writing of a storage unit increases, the storage unit eventually becomes read-only, thus becoming a bad block. In order to prolong the service life of the storage device, an effective method is to use all the storage units in the storage device in a balanced manner on the premise of affecting the performance as little as possible, so as not to allow one or several storage units to be overused. This technique of using memory cells in a storage device in a balanced manner is called a wear leveling technique. [0003] The following two common non-volatile flash memory NOR FLASH and NAND FLASH are taken ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C29/00G06F12/02
Inventor 张楠杨贵龙
Owner BEIJING WATCH DATA SYST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products