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Tunnel switch based on lead zirconat-titanato material

A lead zirconate titanate and tunnel technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of energy reduction, phase pollution, and difficult application of ultra-thin film devices in the balance system, so as to improve stability and reliability, reduce Effect of leakage current

Inactive Publication Date: 2009-08-19
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these surface effects, including intrinsically limited electrostatic shielding of metal electrodes or process issues due to defects, stress, phase contamination, and epitaxy pressure, can generate a considerable polarization field that makes individual domains in a memory cell become 180° / 90 Zebra Domain
The reason for this change is the reduction of energy in the balance system, which is why ultra-thin film devices are difficult to apply in practice
In addition, the pulse width of the memory reading and writing process is long enough relative to the domain transition time, which can ensure the safety of the operation. Here, a reliability problem is raised, including imprinting and fatigue
[0003] Therefore, the disadvantage of the prior art is that the stability and reliability of the device cannot meet the needs of industrial applications

Method used

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Embodiment Construction

[0016] The specific implementation of a tunnel switch based on lead zirconate titanate material provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0017] attached Figure 1A Shown is a schematic diagram of the structure of the tunnel switch in this specific embodiment, including: a substrate 100; an insulating layer 110, the insulating layer 110 is arranged between the substrate and the first electrode 120; the first electrode 120, the first electrode 120 is disposed on the surface of the substrate 100; a lead zirconate titanate material layer 130, the lead zirconate titanate material layer 130 is disposed on the surface of the first electrode 120 away from the substrate 110; a dielectric thin film layer 140, the dielectric thin film layer 140 is disposed On the surface of the lead zirconate titanate material layer 130 away from the first electrode 120 ; and the second electrode 150 , the second electrode 150 is di...

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Abstract

The invention discloses a lead zirconate titanate material-based tunneling switch which comprises a substrate, a first electrode, a lead zirconate titanate material layer, a medium thin-film layer and a second electrode; the first electrode is arranged on the surface of the substrate; the lead zirconate titanate material layer is arranged on the surface of the first electrode, far from the substrate; the medium thin-film layer is arranged on the surface of the lead zirconate titanate material layer, far from the first electrode; the medium thin-film layer is made from a material with high dielectric constant; and the second electrode is arranged on the surface of the medium thin-film layer, far from the lead zirconate titanate material layer. The lead zirconate titanate material-based tunneling switch has the advantages that the material with high dielectric constant is adopted as the medium thin-film layer, thus improving the stability and reliability of the tunneling switch and meeting the requirements put forth by industrial application in a better way.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor devices, in particular to a tunnel switch based on lead zirconate titanate material. 【Background technique】 [0002] Recently, the application of ultra-thin films in multifunctional devices has received great attention in the industry, such as high-density ferroelectric random access memory, which can reduce the lateral and vertical dimensions of memory cells without reducing the remnant polarization. The calculation of the first law and the experimental observation show that after the thickness of the film is reduced to a few unit particles, strong ferroelectricity can still exist in these ultra-thin films. However, these surface effects, including intrinsically limited electrostatic shielding of metal electrodes or process problems due to defects, stress, phase contamination, and epitaxy pressure, can generate a considerable polarization field that makes individual domains in a memory cell become ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/92H01L29/43
Inventor 江安全马镇
Owner FUDAN UNIV
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