Tunnel switch based on lead zirconat-titanato material
A lead zirconate titanate and tunnel technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of energy reduction, phase pollution, and difficult application of ultra-thin film devices in the balance system, so as to improve stability and reliability, reduce Effect of leakage current
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[0016] The specific implementation of a tunnel switch based on lead zirconate titanate material provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0017] attached Figure 1A Shown is a schematic diagram of the structure of the tunnel switch in this specific embodiment, including: a substrate 100; an insulating layer 110, the insulating layer 110 is arranged between the substrate and the first electrode 120; the first electrode 120, the first electrode 120 is disposed on the surface of the substrate 100; a lead zirconate titanate material layer 130, the lead zirconate titanate material layer 130 is disposed on the surface of the first electrode 120 away from the substrate 110; a dielectric thin film layer 140, the dielectric thin film layer 140 is disposed On the surface of the lead zirconate titanate material layer 130 away from the first electrode 120 ; and the second electrode 150 , the second electrode 150 is di...
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