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Vacuum electron beam melting furnace for polysilicon purification

A vacuum electron beam and smelting furnace technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., to achieve the effects of high energy density, large-scale and automation, and high heating efficiency

Active Publication Date: 2009-06-03
桂林实创真空数控设备有限公司
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  • Abstract
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Problems solved by technology

[0004] In addition, the Chinese publication number is CN101169311A, and the patent application titled "Electron Beam Vacuum Melting Furnace" discloses an electron beam vacuum smelting furnace for smelting refractory metal titanium. Due to the different application objects, this equipment is different from this The devices proposed by the invention have great differences in their principles and structures

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  • Vacuum electron beam melting furnace for polysilicon purification
  • Vacuum electron beam melting furnace for polysilicon purification
  • Vacuum electron beam melting furnace for polysilicon purification

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Embodiment Construction

[0029] Reference figure 1 , The vacuum electron beam melting furnace for polysilicon purification of the present invention includes electron gun a1, electron gun b2, electron beam a3, electron beam b4, melting chamber 5, feeding mechanism 6, water-cooled crucible 8, crystallization crucible 9, ingot pulling mechanism 13, and high voltage power supply 15. , Electric control cabinet 16, operation table 17, furnace door 18, vacuum system 19, video observation system 20 and discharge mechanism 21. The melting chamber 5 is square or cylindrical, and the chamber wall is a double-layer water-cooled structure or a coil water-cooled structure. The electron gun a1 and the electron gun b2 are 2-4, which are installed vertically downward on the wall of the melting chamber 5. A vacuum system 19 is arranged above the melting chamber 5, and the feeding mechanism 6 is arranged on one side of the melting chamber 5 and connected to the motor , There is an isolation valve between the feeding chamber...

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Abstract

The invention provides a vacuum electron beam melting furnace for polysilicon purification. The melting furnace is characterized in that a melting chamber is square or cylindrical, a chamber wall is of a double water cooling structure or a coil water cooling structure; an electron gun is vertically and downwardly or horizontally arranged on the chamber wall of the melting chamber, a vacuum system is arranged at the rear of the melting chamber; an isolating valve is arranged between a feeding chamber and the melting chamber of a feed mechanism, and an inflation valve of an inflation system is arranged at the other side of the melting chamber; a discharge mechanism is arranged at the bottom of the melting chamber and connected with an ingot-pulling mechanism; the ingot-pulling isolating valve is arranged between discharge mechanism and the melting chamber; the melting chamber is internally provided with a water cooling crucible and a crystallizing crucible; all high-voltage devices of a high-voltage power supply of an electrical control system are arranged at a fuel tank filled with a transformer; and by adopting oil insulation of the transformer, the high-voltage power supply is connected with an electric cabinet which is connected with a console. The melting furnace has the advantages that a plurality of elements can be purified simultaneously, the production efficiency is high, energy consumption is low, energy-saving effect is excellent, and large-scale and automatic operation is easy to be implemented.

Description

Technical field [0001] The invention relates to a polysilicon purification equipment, in particular to a vacuum electron beam melting furnace for polysilicon purification. Background technique [0002] At present, the global energy is tight, the demand for solar energy has increased significantly, and the demand for high-purity silicon wafers for manufacturing solar cells has also increased significantly. The original purification method mainly uses metallic silicon with a silicon content of more than 99% as raw material, purifies it by vapor phase distillation purification, and then undergoes solidification treatment to obtain a higher purity silicon material. This material is mainly used in the semiconductor industry, and the scraps left over after slicing can be used as materials for solar cells. Such scraps are limited in quantity and cannot meet the requirements for producing solar cells. In addition, this method inevitably produces a large amount of environmental pollution ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/00C01B33/037
CPCY02P20/10
Inventor 黄以平李少林宋宜梅
Owner 桂林实创真空数控设备有限公司
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