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Nonvolatile memory device, system, and method providing fast program and read operations

A non-volatile storage and fast technology, used in read-only memory, information storage, static memory, etc., can solve the problem of not allowing ready-to-update data, and achieve the effect of improving the programming rate

Active Publication Date: 2009-05-20
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, MROM, PROM, and EPROM do not allow ready-to-update stored data because these memory types cannot be easily erased and written to

Method used

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  • Nonvolatile memory device, system, and method providing fast program and read operations
  • Nonvolatile memory device, system, and method providing fast program and read operations
  • Nonvolatile memory device, system, and method providing fast program and read operations

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Embodiment Construction

[0029] Embodiments of the present invention will be described below by taking a NAND flash memory device as an example to illustrate the structural and operational features of the present invention.

[0030] However, this invention may be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. Rather, these implementations are provided as illustrative examples.

[0031] figure 1 is a waveform diagram of a programming start voltage according to an embodiment of the present invention. see figure 1 , in a programming operation, the programming voltage V applied to the word line of the memory cell pgm The step voltage ΔV is increased in each incremental programming loop (loop). The programming voltage V pgm Gradually increase until the final programming voltage V pgm_last Applied to the cell during the last programming cycle.

[0032] In order to increase the overall programming rate of a constituent flash memory dev...

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PUM

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Abstract

Disclosed are program and read methods for a nonvolatile memory system, including determining to program first data in which one of fast and normal modes; providing the first data with an error code generated by a multi-bit ECC engine, in the fast mode, and generating second data; programming the second data in a cell array by a program voltage having a second start level higher than a first start level; and reading the second data from the cell array, the second data being output after processed by the multi-bit ECC engine that detects and corrects an error from the second data.

Description

technical field [0001] The present invention relates generally to semiconductor memory devices, and more particularly to a nonvolatile memory device, system and method for performing read and program operations. Background technique [0002] Semiconductor memory devices can be classified into volatile and nonvolatile in operation characteristics. Volatile semiconductor memory devices are generally characterized by high-speed read and write operations, but lose stored data when no external power is applied. In contrast, nonvolatile semiconductor memory devices retain stored data when no external power is applied. Therefore, nonvolatile semiconductor memory devices are widely used in applications requiring data retention regardless of the power supply state. There are many types of non-volatile semiconductor memory devices, including, as examples: Masked Read Only Memory (MROM), Programmable ROM (PROM), Erasable Programmable ROM (EPROM), Electronically Erasable Programmable ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/42G11C19/10G11C16/26
CPCG11C29/00H03M13/13G11C2211/5641G11C11/5628G06F11/1072H03M13/356G11C16/0483G11C11/5642H03M13/098H03M13/6306G11C16/00
Inventor 曹成奎任容兑
Owner SAMSUNG ELECTRONICS CO LTD
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