Write-through cache oriented SDRAM read-write method

Abstract

The invention relates to an SDRAM read-write method and discloses an SDRAM read-write method facing write-penetrable cache. The invention mainly uses the characteristics of single write of a physical storage SDRAM to disclose a write-combined mechanism, thus reducing the access time of a CPU to memory data and simultaneously improving the access efficiency of the SDRAM. The method is applicable for being applied to the field of multimedia processing chip which has frequent access to the storage and is designed by using multicore SoC.

Description

technical field [0001] The invention relates to an SDRAM read and write method, in particular to an SDRAM read and write method oriented to write penetration cache. Background technique [0002] SDRAM (Synchronous Dynamic Random Access Memory), that is, synchronous dynamic random access memory, which is synchronized with the system clock, supports high-speed bus clock frequency, has been widely used in large-capacity data storage, and is cost-effective. It uses a multi-body (Bank) memory structure and burst mode, which can transfer a whole block of data rather than just a unit of data. Each bank is addressed by row and column, and the number of banks and the number of row and column addresses mainly depend on the capacity of the SDRAM memory. The current SDRAM is divided into SDR SDRAM and DDR SDRAM, where SDR is the abbreviation of Single Data Rate, and DDR is the abbreviation of Double Data Rate. [0003] In the existing SDRAM, the working mode of the SDRAM needs to be s...

AI Technical Summary

Problems solved by technology

[0005] The existing public literature mainly focuses on using Cache cache to reduce the time of CPU reading and writing memory (such as SDRAM), but does not combine with the characteristics of physical memory SDRAM to improve memory access efficiency

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