Probe-induced surface plasma resonance lithographic device and method

A technology of surface plasmon and resonant light, which is applied in the direction of microlithography exposure equipment, photolithography process exposure equipment, measurement equipment, etc., can solve the problems of lithography equipment not appearing, super-resolution mask thermal fatigue, super-resolution performance degradation, etc. Problems, easy maintenance and upgrades, improved positioning accuracy, and low laser power

Inactive Publication Date: 2009-04-15
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

However, research in recent years has also found many problems: first, the super-resolution mask is prone to thermal fatigue, which leads to a decrease in super-resolution performance; second, the use of noble metals (such as platinum, gold, and palladium, etc.) up to 9 layers), the production process is complex and expensive; the third is that it needs to use the dynamic effect of the high-speed rotation of the disc-shaped medium, which is difficult to apply to pattern etching of arbitrary shapes
[0005] Although the principle of this technology has been proposed, the corresponding lithography device has not yet appeared, so designing a corresponding lithography device has become a very necessary work

Method used

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  • Probe-induced surface plasma resonance lithographic device and method
  • Probe-induced surface plasma resonance lithographic device and method
  • Probe-induced surface plasma resonance lithographic device and method

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[0064] The specific details and operation methods of the present invention will be described in detail below with reference to the accompanying drawings and examples, but the protection scope of the present invention should not be limited thereto.

[0065] see first figure 1 , figure 2 and image 3 , figure 1 It is a schematic diagram of the system composition of the probe-induced surface plasmon resonance lithography device of the present invention; figure 2 It is a structural schematic diagram of the first preferred embodiment of the present invention; image 3 yes figure 2 The top view of the probe control device 2; it can be seen from the figure that the probe-induced surface plasmon resonance lithography device of the present invention consists of a surface plasmon excitation device 1, a probe control device 2, a sample stage 3, a probe state detection device 4, Composition of optical microscope 5 and control system 6: see figure 2 and image 3 , the structure ...

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Abstract

The invention provides probe induction surface plasmon resonance lithographic equipment and a photoetching method thereof. The device consists of a surface plasma excitation device, a probe control device, a sample platform, a probe state detection device, an optical microscope and a control system. The device has the characteristics that the needed laser power is low, the photoetching distinguishability is high, the probe is not easy to be damaged, and the photoetching film is simple; in addition, the device has the function of an atomic force microscope.

Description

technical field [0001] The invention relates to a lithography device, in particular to a probe-induced surface plasmon resonance lithography device and a lithography method thereof. Background technique [0002] With the rapid development of nano-processing, micro-electro-mechanical systems (MEMS), integrated circuits and other technologies, the lithography technology serving them has also become the focus of research in various countries. The lithography technology applied in the semiconductor industry is developing rapidly along the UV-DUV-EUV technical route, which meets the requirement of further shrinking the feature scale of micro-nano devices to a certain extent. However, in terms of nanofabrication, MEMS and some special integrated circuits, due to the characteristics of product personalization, small batches and shorter update cycles, it is impossible to use the technology used in large-scale integrated circuits for processing, and the photolithography used in the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G01N13/16G12B21/20G12B21/06G02B21/00G01Q60/22
Inventor 赵成强徐文东洪小刚李小刚唐晓东
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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