Exposure manufacture process, production method of image element structure and semi-modulation type photomask using the same

Abstract

The invention discloses a semi-adjustable optical mask, which is applied to the exposal preparing process to form a plurality of photoresistive patterns with even sizes. The semi-adjustable optical mask comprises a transparent baseplate and a plurality of optical mask patterns. The optical mask patterns are arranged on the transparent baseplate along a preset direction, wherein, the size of the optical mask pattern can be gradually changed along the preset direction. Accordingly, though different exposal precision exists in different regions on the large-size baseplate, the photoresistive patterns with even sizes can still be prepared through the gradual compensation way. In addition, the preparing method for utilizing the exposal preparing process and the pixel structure of the semi-adjustable optical mask is also provided.

Description

technical field [0001] The present invention relates to a photomask, an exposure process using the photomask and a manufacturing method of a pixel structure, and in particular to a half tone photomask (half tone mask), and the use of the half tone mask. The exposure process of the photomask and the manufacturing method of the pixel structure. Background technique [0002] A liquid crystal display (Liquid Crystal Display, LCD) is composed of a color filter substrate (Color Filter Substrate), a thin film transistor array substrate (TFT array substrate) and a liquid crystal layer located between the two substrates. In recent years, due to the increase in the demand for LCD TVs, LCDs have gradually developed towards large-sized panels. [0003] Generally speaking, the existing five mask process (Five Mask Process) is used to manufacture components such as the gate, channel layer, source, drain, protective layer and pixel electrode of the thin film transistor. However, in order...

AI Technical Summary

Problems solved by technology

Therefore, the sizes of the photoresist patterns 150a, 150b, 150c, and 150d will be greatly different.

[0006] In other words, when the photoresist patterns 150a, 150b, 150c, and 150d with uneven sizes are used as etching masks to fabricate the channel layer, source and drain of each thin film transistor, part of the thin film transistor will be missing (defect). ), that is, the abnormal pattern (abnormal pattern) caused by poor etching of the source and drain

In particular, the above-mentioned abnormal pattern will lead to the generation of bright dots, resulting in poor display quality of the liquid crystal display.

In addition, as the substrate becomes larger and larger, the above-mentioned problems cannot be well solved only by changing the process parameters and controlling the exposure, development and other conditions.

Images