Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for observing tungsten material product microscopic structure

A microstructure and product technology, applied in the direction of analyzing materials, preparation of test samples, and measuring devices, etc., can solve the problems of fast corrosion, easy generation of oxide film, and inability to improve tissue contrast, etc., and achieve slow corrosion, Easy to control and eliminate the effect of oxide film

Inactive Publication Date: 2009-01-28
西安汉唐分析检测有限公司
View PDF0 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problems brought by these conventional methods are as follows: (1) The corrosion rate of the tissue is not easy to be controlled by the corrosive agent of chemical corrosion, and the oxide film is easy to be formed on the surface after corrosion
(2) The electrolytic corrosion method controls the corrosion rate by adjusting the electrolytic voltage, but the corrosion rate is fast, and the surface is prone to produce an oxide film after electrolysis
Both methods are prone to produce oxide films, which cannot improve the contrast of the tissue, affect the observation of tissue details, and sometimes produce false images of the tissue

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for observing tungsten material product microscopic structure
  • Method for observing tungsten material product microscopic structure
  • Method for observing tungsten material product microscopic structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The raw material is Fw-01 tungsten powder, the average particle size is 4.4 microns, and the tungsten slab is formed by static pressure. The vacuum sintering temperature is 1800°C, and the sintering time is 6 hours. After grinding, grinding and polishing the surface of the tungsten slab, select HNO 3 , HF mixed solution, HNO 3 , The volume ratio of HF is 1:1 or 3:1 to slightly corrode the metallographic surface of the prepared tungsten sample, and then use 10 grams of K 3 Fe(CN) 6 , 10 grams of NaOH and 100 ml of water solution sassafras, the time is about 5s. figure 1 for the microstructure diagram.

Embodiment 2

[0020] The tungsten plate with a thickness of 10mm is rolled at high temperature, and the surface of the tungsten plate is ground, ground and polished, and then HNO is selected. 3 , HF mixed solution, HNO 3 , The volume ratio of HF is 3: 1 slightly erodes the metallographic surface of the prepared tungsten sample, and then uses 10 grams of K 3 Fe(CN) 6 , 10 grams of NaOH and 100 ml of water solution sassafras, the time is about 5s. figure 2 Its microstructure diagram.

Embodiment 3

[0022] The tungsten alloy powder is molded at 100MPa, and after holding the pressure for 20s, it is sintered in a sintering furnace at 1500°C and kept for 2 hours to obtain a WNiFe plate with a thickness of 5mm. The surface of the WNiFe plate is ground, ground and polished, and HNO 3 , HF mixed solution, HNO 3 , The volume ratio of HF is 3: 1 slightly erodes the metallographic surface of the prepared tungsten sample, and then uses 10 grams of K 3 Fe(CN) 6 , 10 grams of NaOH and 100 ml of water solution sassafras, the time is about 5s. image 3 Its microstructure diagram.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for observing the metallographic microstructure of tungsten material products, which relates to a metallographic method adopting a chemical etching method for etching and observing the metallographic microstructure of tungsten products. The method of the invention comprises the following steps: surface grinding, lapping and polishing of tungsten material products and is characterized in that: after being treated by surface grinding, lapping and polishing, a mixed solution of HNO3 and HF is utilized to etch the surface of the tungsten material product, and then an aqueous solution of K3Fe(CN)6 and NaOH is adopted to scrub the etched surface of the tungsten material product so that the metallographic microstructure of the tungsten material product can be observed. The method of the invention has low etching speed, is easy to control and eliminates an oxide film generated after tungsten is etched. In addition, the fine metallographic sample of tungsten is produced and the organization form of tungsten is represented precisely.

Description

technical field [0001] A method for observing the metallographic microstructure of tungsten material products relates to a metallographic method for observing the microstructure of tungsten products by means of chemical etching. Background technique [0002] Tungsten has a high melting point (the melting point of tungsten is about 3400°C), high high temperature strength, good corrosion resistance, and high hardness. The physical properties of tungsten make tungsten products widely used in drilling machines, spacecraft, components of X-ray tubes and electrical materials. The observation and study of the structure of tungsten product materials is one of the keys to grasp the performance of tungsten products. The conventional methods for observing the structure of tungsten products are chemical corrosion and electrolysis. Corrosion agent for chemical corrosion method: acid etchant is 5:5:15 HNO 3 , HF, and lactic acid; alkaline etchant is 10 g K 3 Fe(CN) 6 , 10 g KOH or 10...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/32G01N13/10G01Q30/20
Inventor 马红征胡幼芬叶红川张雪华
Owner 西安汉唐分析检测有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com