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Method for preparing cuboid indium oxide single crystal

A cuboid-shaped, indium oxide technology is applied in the field of preparation of cuboid-shaped indium oxide single crystals, which can solve the problems of easy collapse and difficult control of morphology, and achieve the effects of low cost, uniform and controllable morphology, and good dispersion.

Inactive Publication Date: 2008-11-26
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a preparation process for preparing a shape-controllable cuboid indium oxide single crystal by hydrothermal method, so as to solve the problem that the shape of the sample existing in the prior art using the hydrothermal method is difficult to control, easy to collapse and form The crystal-to-polycrystalline conundrum

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  • Method for preparing cuboid indium oxide single crystal
  • Method for preparing cuboid indium oxide single crystal
  • Method for preparing cuboid indium oxide single crystal

Examples

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Embodiment 1

[0023] The preparation method of the cuboid indium oxide single crystal provided in this embodiment includes the following steps:

[0024] a) Preparation of morphology control agent: add ammonia water, n-heptanol, cyclohexylamine and nonanoic acid in sequence according to the ratio, and mix and stir at 0°C for 5 minutes, wherein: the volume ratio of ammonia water, n-heptanol, cyclohexylamine and nonanoic acid is 3:20:20:20;

[0025] b) Preparation of indium salt solution: adding indium chloride compound into distilled water, stirring at 0°C to dissolve it completely to form a transparent solution, wherein: the molar concentration of indium ions is 0.077mol / L;

[0026] c) Preparing the precursor: at 0°C, add the above-prepared indium salt solution dropwise to the above-prepared morphology control agent, and the dropping rate is controlled at 60 drops / min; after dropping, stir for 5 minutes; then transfer to the reaction kettle placed in a melting furnace and heated to 180°C fo...

Embodiment 2

[0031] The preparation method of the cuboid indium oxide single crystal provided in this embodiment includes the following steps:

[0032] a) Preparation of morphology control agent: add ammonia water, n-heptanol, cyclohexylamine and nonanoic acid in sequence according to the ratio, and mix and stir at -5°C for 5 minutes, wherein: the volume ratio of ammonia water, n-heptanol, cyclohexylamine and nonanoic acid 3:20:20:20;

[0033] b) Preparation of indium salt solution: add indium nitrate compound into distilled water, stir at -5°C to dissolve it completely, and form a transparent solution, wherein: the molar concentration of indium ions is 0.077mol / L;

[0034] c) Preparing the precursor: at -5°C, add the above-prepared indium salt solution dropwise to the above-prepared morphology control agent, and the dropping rate is controlled at 60 drops / min; after dropping, stir for 5 minutes; then transfer to the reaction Put it in a furnace and heat it to 200°C, and keep it warm for ...

Embodiment 3

[0039] The preparation method of the cuboid indium oxide single crystal provided in this embodiment includes the following steps:

[0040] a) Preparation of morphology control agent: add ammonia water, n-heptanol, cyclohexylamine and nonanoic acid in sequence according to the ratio, and mix and stir at 5°C for 5 minutes, wherein: the volume ratio of ammonia water, n-heptanol, cyclohexylamine and nonanoic acid is 3:20:20:20;

[0041] b) Preparation of indium salt solution: adding indium acetate compound into distilled water, stirring at 5°C to dissolve it completely to form a transparent solution, wherein: the molar concentration of indium ions is 0.077mol / L;

[0042] c) Preparing the precursor: at 5°C, add the above-prepared indium salt solution dropwise to the above-prepared morphology control agent, and the dropping rate is controlled at 60 drops / min; after dropping, stir for 5 minutes; then transfer to the reaction kettle placed in a melting furnace and heated to 150°C for...

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Abstract

The invention discloses a preparation method for cuboid-shaped indium oxide single crystal, which belongs to the hydro-thermal method and consists of the steps of preparing a feature control agent, preparing indium saline solution, preparing a precursor, offcenter separation, calcination, natural cooling, etc. By using the feature control agent, the invention solves the problems that the feature of a sample is difficult to control and easy to collapse and the crystal formed is polycrystal when the hydro-thermal method is used in the prior art; preparing the cuboid-shaped indium oxide single crystal with a controllable feature by using the hydro-thermal method is realized; Owing to the invention, the decentrality of the obtained indium oxide single crystal is good; the feature is uniform and controllable; the preparation method of the invention is simple; the raw material is easy to get; the cost is low; the single crystal of the invention can be suitable for a large scale of industrialized production.

Description

technical field [0001] The invention relates to a method for preparing indium oxide, in particular to a method for preparing a cuboid indium oxide single crystal. Background technique [0002] Stoichiometric indium oxide is a wide bandgap insulator, while doped non-stoichiometric indium oxide is a wide band n-type semiconductor with good conductivity (over 1S m -1 ), has high transparency and a light transmittance of more than 80% in the visible light region. It is precisely because of these characteristics that the application of indium oxide has attracted widespread attention of scientists. An important use of indium oxide is to form an indium tin oxide film (ITO film) that is transparent to visible light, has good electrical conductivity, low film resistance, and can strongly reflect infrared rays with tin oxide. In addition, indium oxide can also be used in thin film sensors and detectors, insulating layers in capacitors, piezoelectric media in surface acoustic wave de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B7/10C01G15/00
Inventor 彭子飞杜燕云徐铸
Owner SHANGHAI NORMAL UNIVERSITY
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