Single chip integrated semiconductor laser with tunable wavelength and without mode hopping

A technology of wavelength tuning and monolithic integration, which is applied in the direction of semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., and can solve problems such as synchronization difficulties, equipment complexity, and cost increases

Inactive Publication Date: 2008-10-15
ZHEJIANG UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The synchronization requirement for the two control units increases the complexity and cost of the equipment, and it is very difficult to keep synchronized due to factors such as the age of the laser or environmental conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single chip integrated semiconductor laser with tunable wavelength and without mode hopping
  • Single chip integrated semiconductor laser with tunable wavelength and without mode hopping
  • Single chip integrated semiconductor laser with tunable wavelength and without mode hopping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Different from conventional lasers that use DBR or DFR (distributed feedback) gratings to select working wavelengths, the device of the present invention performs wavelength selection based on wavelength dispersive diffraction gratings, such as blazed gratings and arrayed waveguide gratings. At present, the waveguide diffraction grating technology is relatively mature, and can be well used as a wavelength (de)multiplexer in the DWDM system of optical communication.

[0031] figure 2is a schematic diagram of a typical wavelength demultiplexer based on an integrated diffraction grating, which includes an input / output waveguide array and a blazed grating. The input optical signals of different wavelengths are coupled into the input waveguide 12 of the demultiplexer by the optical fiber 14. At the other end of the input waveguide, when the light enters the slab waveguide, it will diverge, enter the etched blazed grating 13 and then be reflected by the grating. back into t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a monolithic integrated mode-hop-free wavelength tunable semiconductor laser which comprises an optical cavity consisting of a waveguide end surface and a wavelength dispersive diffraction grating, an active waveguide arranged at one side of the optical cavity and providing gains and a wavelength dispersive diffraction grating arranged at the other side of the optical cavity and applied as a filter to select lasing wavelength; a planar waveguide area and a wavelength tuning area are arranged between the active waveguide and the wavelength dispersive diffraction grating and the wavelength tuning area is clamped between a pair of electrodes. Effective refractive index of the wavelength tuning area is changed by an electric effect so as to adjust the wavelength of a grating filter as well as the length of the optical cavity, so that the adjustment of the laser mode wavelength is synchronous with that of wavelength of the grating filter, thus realizing mode-hop-free continuous tuning. The design structure can be used for multiband integrated tunable lasers and multi-wavelength tunable laser array.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a monolithic integrated non-mode-hop wavelength tunable semiconductor laser. Background technique [0002] In many application fields such as interferometry, spectroscopy, optical communication, etc., it is hoped to obtain a wavelength-tunable laser source without mode hopping covering a wide spectral range. Lasers generally change their output wavelength by adjusting the optical properties of the resonator. When the optical properties of the resonator are continuously tuned, the excitation mode of the laser sometimes jumps suddenly from one wavelength to another, which is called mode hopping. Taking wavelength scanning interferometry as an example, mode hopping can adversely affect the spatial resolution, positional accuracy, and other distance / depth-dependent properties of distance measurements. In order to achieve mode-hop-free wavelength tuning, when the wavelength is tuned by a wave...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00H01S5/10H01S5/20H01S5/06
Inventor 何建军韩亮
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products