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Photoelectric diode device

A technology of photodiodes and transistors, applied in radiation control devices, etc., can solve problems such as poor electron accumulation efficiency of photodiodes 2

Active Publication Date: 2008-10-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0004] The electron collection efficiency of the photodiode 2 is still not good, and there are disadvantages of saturation diffusion effect (blooming effect) and crosstalk (cross talk) problems

Method used

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  • Photoelectric diode device
  • Photoelectric diode device
  • Photoelectric diode device

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Embodiment Construction

[0044] A photodiode with high-efficiency electron gathering is provided with two first-type transistors on a first-type substrate, and between the two first-type transistors, a heavily doped second-type well, a second A diode structure composed of a doped doped region and a second doped doped region. Wherein, when the first-type substrate is a P-type substrate, the first-type transistor is a P-type transistor, and the heavily-doped second-type well is a heavily-N-type well. The doped regions are respectively a P-type doped region and an N-type doped region. In addition, the first-type substrate can also be an N-type substrate, and in this case, the first-type transistor is an N-type transistor, and the second-type doped well It is a heavy P-type well, and the first doped region and the second doped region are respectively an N-type doped region and a P-type doped region. In the following, the first-type substrate will be used as the P-type substrate. And a photodiode with two...

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Abstract

The invention provides a photorectifier device which comprises a first type substrate provided with two first type transistors, a second heavy doping-typed well arranged in the first type substrate and positioned between the two first type transistors, a first doping-typed doping area arranged on a shallow surface in the first type substrate and positioned between the two first type transistors, a second doping-typed doping area arranged on the shallow surface in the first type substrate and positioned between the first doping-typed doping area and the first type transistors, and a contact jaw contacted with the first doping-typed doping area and arranged on the surface of the first type substrate. Therefore, the invention provides the photorectifier device which can lead electronic accumulation to be more effective and has the effect of eliminating saturation diffusion and the advantage of improving the problem of crosstalk.

Description

technical field [0001] The present invention relates to a photodiode, in particular to a photodiode with high-efficiency electron gathering. Background technique [0002] The main function of the Complementary Metal Oxide Semiconductor (COMS) image sensor is to convert light energy into electronic signals, and the obtained electronic signals can be used to calculate the amount of electronic signals through analog / digital conversion. The digital equalizer converts the signal into digital information, and then uses a mathematical algorithm to synthesize all the information, which can convert the real-world color data into digital data of 0 and 1, so the quality of light energy converted into electronic signals determines the image quality. In the CMOS image sensor, the photodiode plays the role of a photoelectric conversion component, and its photosensitive characteristics will also control the image quality. [0003] see figure 1 As shown, it is the structure of a conventio...

Claims

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Application Information

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IPC IPC(8): H01L27/146
Inventor 黄圣扬
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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