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Ultrafast pulse power switch device as well as autoexcitation picosecond magnitude power pulse generator

A power switching device, ultra-fast pulse technology, applied in the direction of electric pulse generator circuit, energy storage element to generate pulses, etc., can solve the problems of small peak power, poor output pulse repetition, poor pulse repetition, etc. Small, repeatable, high peak power effect

Inactive Publication Date: 2008-10-08
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an ultrafast pulse power switching device, which overcomes the shortcoming that the existing ultrafast photoelectric semiconductor switching device needs to be triggered by an ultrafast laser; overcomes the poor output pulse repeatability of the existing gas switching device, and the long tail off Shortcomings
[0006] Another object of the present invention is to provide a self-excited picosecond level power pulse generator, which overcomes the need to rely on picosecond laser triggering for existing photoelectric circuits, poor pulse repeatability and long turn-off tail of existing gas discharge circuits, and Shortcomings of the existing pulse shaping circuit with low peak power

Method used

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  • Ultrafast pulse power switch device as well as autoexcitation picosecond magnitude power pulse generator
  • Ultrafast pulse power switch device as well as autoexcitation picosecond magnitude power pulse generator
  • Ultrafast pulse power switch device as well as autoexcitation picosecond magnitude power pulse generator

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Embodiment

[0037] The circuit of the pulse generator of this embodiment is as attached Figure 4 As shown, the selected parameters are: high-voltage DC power supply 1 is an adjustable DC high-voltage power supply from 0 to 5000V, capacitor 3 is a 0.1μF ceramic capacitor with a withstand voltage of 6000V, and resistor 2 is an adjustable resistor. The structure of ultrafast pulse power switching device 8 is as attached figure 2 As shown, its selected parameters are: the material of the semiconductor wafer 14 is semi-insulating GaAs:EL2, and the resistivity is 5×10 7 Ω·cm, electron mobility 5500cm 2 / V·s, the size of the semiconductor wafer 14 is 9.0mm × 6.0mm × 0.6mm, the size of the electrode a12 and the electrode b22 on the semiconductor wafer 14 is 6.0mm × 4.0mm, the radius of the fillet is 1.1mm, the electrodes a12 and The distance between the electrodes b22 is 3.5 mm, and the air gap of 0.2 mm is made on the microstrip transmission line b25, and the characteristic impedances of the...

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Abstract

The invention discloses an ultra-fast pulse power switch device comprising a semi-insulated ultra-fast semiconductor material, an air gap, a transmission line and coaxial terminals connected by turn. The invention also discloses a self energizing picosecond magnitude power pulse generator, a high voltage DC power supply are connected with resistances, capacitances in series to compose to a loop, the negtive pole of the high DC power supply is grounded, the ultra-fast pulse power switch device is connected in series with the load by the coaxial transmission lines, the series branch circuit is connected with the capacitances in parallel, the package shell of the ultra-fast pulse power switch device is grounded. The invention, comparing with the prior art, has simple whole structure, good portability, low cost and strong anti-harsh environment ability without any laser to trigger.

Description

technical field [0001] The invention belongs to the technical field of electronic equipment, relates to an ultrafast pulse power switch device, and also relates to a self-excited picosecond-level power pulse generator made by using the ultrafast pulse power switch device. Background technique [0002] Ultrafast power pulse generators, especially picosecond power pulse generators, are the focus of research and development in the fields of ultra-high-speed electronics, ultra-wideband communication, THz diagnosis, ultra-wideband anti-stealth shock radar and electromagnetic weapons. The current mainstream technology of picosecond ultrashort pulse generators is optoelectronic technology, that is, semi-insulating ultrafast optoelectronic semiconductor materials (GaAs, InP, etc.) are used as switching devices. The photoelectric semiconductor switching device can withstand high DC bias voltage in the dark state; when irradiated by laser pulses, a large number of photogenerated elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K3/57
Inventor 施卫王馨梅侯磊徐鸣刘峥
Owner XIAN UNIV OF TECH
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