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Aluminum nitride piezoelectric film and preparation thereof

An aluminum nitride piezoelectric and aluminum nitride technology, which is applied in chemical instruments and methods, cleaning methods and utensils, cleaning methods using liquids, etc., can solve problems such as difficult realization, and achieve improved compactness, improved adhesion, The effect of avoiding structural defects

Inactive Publication Date: 2008-10-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, the existence of stress is inevitable in the process of film preparation, and it is difficult to completely reduce the stress to zero.

Method used

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  • Aluminum nitride piezoelectric film and preparation thereof
  • Aluminum nitride piezoelectric film and preparation thereof
  • Aluminum nitride piezoelectric film and preparation thereof

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Embodiment

[0051] As a specific embodiment of the present invention, a radio frequency magnetron sputtering apparatus and an aluminum target are used, and a Si sheet is used as the substrate. Firstly, the substrate was ultrasonically cleaned in acetone, isopropanol and absolute ethanol for 15 minutes, then rinsed with deionized water for 10 minutes, dried with dry nitrogen, and placed on the substrate holder of the sputtering apparatus. Before coating, use a molecular pump to pump the air pressure in the vacuum chamber to 7×10 -4 Pa, while heating the substrate temperature to 400°C. Introduce the working gas Ar gas into the vacuum chamber, so that the working pressure in the vacuum chamber is 0.4Pa, adjust the radio frequency sputtering power to 400W, use the Ar gas glow to bombard the surface of the aluminum target for 15min, and remove the impurities or oxide layer attached to the surface of the aluminum target. Introduce reaction gas N 2 Gas, adjust the flow rate of nitrogen and arg...

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Abstract

The invention discloses a preparation method of aluminum nitride piezoelectric thin film. The preparation method is characterized in that the preparation method comprises the steps that step one, a substrate is cleaned, aluminum is taken as target material; step two, the substrate is sent into a magnetic controlled sputter; step three, a radio frequency magnetic controlled sputtering method is adopted to deposit aluminum nitride polycrystalline film with compressive stress or tensile stress; step four, the radio frequency magnetic controlled sputtering method is adopted to deposit aluminum nitride polycrystalline film with corresponding compressive stress or tensile stress on the aluminum nitride polycrystalline film obtained in the step three; step five, the step three and the step four are performed repeatedly and alternatively to obtain aluminum nitride polycrystalline film. The aluminum nitride polycrystalline film obtained by adopting the method has low stress and long service life, and the preparation method is simple, the reaction step is fewer, and the operation is easy.

Description

technical field [0001] The invention relates to the field of aluminum nitride piezoelectric films, in particular to a method for preparing low-stress composite multilayer aluminum nitride piezoelectric films. Background technique [0002] The rapid development of modern electronic information technology has greatly promoted the development of electronic products in the direction of multi-function, high performance, reliability, miniaturization, portability and low cost required by popularization. The mainstream communication frequency bands of wireless communication technologies such as satellites and cellular phones are increasingly crowded, and people are paying more and more attention to higher frequency communication applications. Radio frequency RF (800MHz ~ 4GHz) communication has the advantages of larger bandwidth and faster data transmission in relatively low frequency band communication. In the GHz communication system, the pre-filter is the key link to improve the...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35B08B3/12B32B7/02B32B33/00
Inventor 石玉钟慧王华磊黄光俊杜波蒋欣何泽涛赵宝林
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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