Wafer with radiating structure and its production method

A technology of heat dissipation structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of prolonged assembly time and increased assembly complexity, and achieve good heat dissipation effect

Active Publication Date: 2010-06-02
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, it is possible to solve the problem of increasing assembly complexity and prolonging assembly time encountered in the prior art by first cutting the wafer into crystal grains and then assembling the heat sink.

Method used

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  • Wafer with radiating structure and its production method
  • Wafer with radiating structure and its production method
  • Wafer with radiating structure and its production method

Examples

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Effect test

Embodiment Construction

[0048] Figure 2A~2E Shown is a schematic cross-sectional view of a manufacturing process of a wafer with a heat dissipation structure according to an embodiment of the present invention. First, please refer to Figure 2A , A wafer 210 is provided. The wafer 210 has an active surface 210a and a back surface 210b opposite to the active surface 210a. After that, like Figure 2B As shown, a plurality of blind holes H are formed on the back surface 210b of the wafer 210. In this step, dry etching or wet etching can be used to etch the backside 210b of the wafer 210 to form these blind holes H. Since the shape of the blind hole H will affect the shape of the metal heat sink that is subsequently formed on the back 210b of the wafer 210, the user can design the blind hole H as a sheet or column according to their needs. Blind holes to form metal heat sinks in the form of fins or columns.

[0049] Next, please refer to Figure 2C As shown, a metal material is filled in the blind holes ...

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PUM

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Abstract

The invention discloses a wafer having a radiating structure, consisting of a wafer and multiple metal radiating parts. The wafer is provided with an active surface and a back surface opposite to theactive surface, wherein the back surface is provided with multiple dead holes. The multiple metal radiating parts are embedded into the head holes, and the metal radiating parts protrude from the backsurface of the wafer.

Description

Technical field [0001] The invention relates to a wafer with a heat dissipation structure and a manufacturing method thereof, and more particularly to a wafer with a heat dissipation structure in which a metal heat sink is partially embedded in the wafer and a manufacturing method thereof. Background technique [0002] In recent years, as the integration of internal circuits of integrated circuit (IC) chips continues to rise, the heat generated by the chips also continues to increase. As far as personal computers are concerned, highly integrated integrated circuit chips (such as IC chips such as central processing units or graphics chips) are the main source of generating a large amount of heat during operation, and heat will cause excessive system temperature. In order to maintain the normal operation of the above-mentioned IC chip, the IC chip must be maintained at a better operating temperature, so as to prevent the performance from being temporarily crashed or damaged due to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/367H01L21/00H01L21/50H01L21/48
Inventor 萧伟民
Owner ADVANCED SEMICON ENG INC
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