Silicon base medium blocking type 1-dimention nano pole structure

Abstract

The invention provides a silicon-based dielectric barrier type one-dimensional nanometer electrode structure, belonging to the micro electric device field. The invention is formed by an upper part silicon-based plate and a lower part silicon-based plate which are bonded, wherein the lower part silicon-based plate is locally provided with a drop-pit structure; the drop-pit is provided inside with a graphical one-dimensional nanometer material film which has the lower part provided with a graphical metal conduction layer. The silicon base dielectric barrier type one-dimensional nanometer electrode structure is applied to electric devices based on gas discharge, which facilitates to the micromation, integration and mass production of the electric devices; moreover, the silicon base dielectric barrier type one-dimensional nanometer electrode structure can avoid the thermal damage of the heat balance plasma to the electrode, which facilitates the improvement the stability and service life of the devices; the dielectric barrier layer can greatly lower the probability of local short circuit, which facilitates the decrease of the clearance between electrodes and ensuring devices work under a lower operating voltage.

Description

technical field [0001] The invention relates to an electrode structure in the technical field of microelectronic devices, in particular to a silicon-based dielectric barrier type one-dimensional nanometer electrode structure. Background technique [0002] Since one-dimensional nanomaterials have tiny diameters on the order of nanometers, if a one-dimensional nanoelectrode material film is used as an electrode material to form a so-called "one-dimensional nanoelectrode system", even if the film thickness is relatively small, it is possible to make the adjacent area of ​​the electrode surface Due to the very large aspect ratio (can be as high as 10 3 above order of magnitude) to produce a significant electric field enhancement effect, so that under the same loading voltage, an electric field with field strength dozens of times higher than that of the parallel plate electrode is established in the local area of ​​the electrode gap and the electrode surface. The one-dimensional...

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Problems solved by technology

[0003] However, the manufacturing process of one-dimensional nanomaterial film is usually difficult to make the film thickness uniform, which cannot be completely avoided in the existing common processes

In this way, it is very difficult to control the electrode gap at the level of a few microns, because under the condition of ensuring the average gap on the entire electrode plane, some local areas are likely to contact the upper and lower electrodes due to uneven film thickness, thus causing a short circuit.

On the other hand, in a one-dimensional nanomaterial film, under a certain loading voltage, the one-dimensional nanomaterial is not completely fixed, but will undergo certain deformation and displacement due to the action of the electric field force. Very common, this phenomenon will also cause contact between the upper and lower electrodes in some localized areas of the membrane, resulting in a short circuit

[0004] After searching the prior art documents, it was found that R B Sadeghian and M Kahrizi published a paper "A method based on A new type of gas ionization sensor with vertical gold nanowires" records a structure of a one-dimensional nano-electrode system, which requires three separate substrates to form the upper and lower electrodes and the isolation layer in between. The manufacturing process is simple stacking. The material and molding process of each substrate make it difficult to realize the electrode structure with an on-chip manufacturing process based on microelectronics processing technology, and it is very difficult to precisely control the gap on the order of several microns, because the thickness of the intermediate layer material is difficult to control. on the order of a few microns

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