Method for desorption of silicon slice

Abstract

The invention discloses a desorption method of silicon chips, which comprises initially increasing backward voltage to an electrostatic chuck for removing electrostatic charge inside the electrostatic chuck, simultaneously removing residual electric charge on the surface of the silicon chips through ionizing inert gas into plasmas by employing the electrical conductivity of ions and judging whether the silicon chips are completely desorbed through the leakage flow rate of back blowing He gas of the back face of the silicon chips between the silicon chips and the electrostatic chuck. The invention has the advantages of high technical integration, safety and high production efficiency, and is particularly adaptable to desorption between the silicon chips and the electrostatic chuck in the processing technique of semiconductor silicon chips.

Description

technical field [0001] The invention relates to a semiconductor silicon chip processing technology, in particular to a silicon chip desorption method. Background technique [0002] In the silicon wafer dry etching process, the silicon wafer is generally placed on the ESC (electrostatic chuck) in the reaction chamber for the etching process. Generally, a forward voltage is applied to the electrostatic chuck, and the silicon wafer is attracted by electrostatic attraction. Adsorbed on the electrostatic chuck. After the etching is completed, the silicon wafer should be desorbed, that is, the residual charge inside the electrostatic chuck and the surface of the silicon wafer should be eliminated, so that the silicon wafer can be completely separated from the electrostatic chuck. The smooth desorption of silicon wafers plays a vital role in the stable productivity of the etching process itself and the etching process. Silicon wafer desorption mainly includes two aspects: the eli...

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Problems solved by technology

[0004] In the prior art, the charge elimination inside the electrostatic chuck, the charge elimination on the surface of the silicon wafer, and the detection of whether the charge elimination is complete are all carried out step by step, which is not conducive to process integration and improvement of productivity, and the safety of silicon wafer desorption Sex is not high

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