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LED and its making method

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve problems such as performance degradation of light-emitting elements, increase in density, and shortened life of light-emitting elements

Inactive Publication Date: 2008-07-16
EPISTAR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, the density of Dislocation Defects in the buffer layer will be greatly increased, which will lead to a reduction in the life of the light-emitting element and a decrease in the performance of the light-emitting element.

Method used

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  • LED and its making method
  • LED and its making method

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Embodiment Construction

[0021] The invention discloses a light-emitting diode and a manufacturing method thereof. Periodic reflective structures are provided between the substrate and the epitaxial structure, and the high-quality epitaxial structure can improve the light extraction rate of the light-emitting diode element and effectively Extend the life of the components, but also improve the operating quality of the components. In order to make the narration of the present invention more detailed and complete, refer to the following description and cooperate Figure 1 to Figure 8 icon of the .

[0022] Please refer to Figure 1 to Figure 3 , which is a cross-sectional view showing the manufacturing process of a light emitting diode according to a preferred embodiment of the present invention. When fabricating a light emitting diode, a substrate 100 is firstly provided for epitaxial growth of a subsequent material layer thereon. Next, a reflective layer 104 is formed to completely cover the surface...

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Abstract

The invention discloses a light-emitting diode (LED) and the manufacturing method thereof. The light-emitting diode at least comprises a substrate, a reflection structure, a buffer layer and a light-emitting epitaxy structure. The reflection structure is arranged on one surface of the substrate, wherein, a plurality of openings are arranged in the reflection structure to make the reflection structure formed into a structure in a regular pattern, and further, one part of the surface of the substrate is exposed. The buffer layer is arranged on the exposed part of the surface of the reflection structure and the substrate and fills the openings. The light-emitting epitaxy structure is arranged on the buffer layer.

Description

technical field [0001] The present invention relates to a light-emitting element, and in particular to a light-emitting diode (Light-Emitting Diode; LED) and a manufacturing method thereof. Background technique [0002] Semiconductor light-emitting elements, such as light-emitting diodes, are elements made of semiconductor materials, which are tiny solid-state light sources that can convert electrical energy into light energy. Because this type of semiconductor light-emitting element is not only small in size, but also has the characteristics of low driving voltage, fast response rate, shock resistance, and long life, and can meet the needs of various application equipment for lightness, thinness, shortness, and smallness, it has become a daily Optoelectronic components that are quite common in life. [0003] At present, when making light-emitting diode elements, low-temperature aluminum indium gallium nitride is directly grown on the substrate as a buffer layer. In this w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/46
Inventor 余国辉薛永鑫郭政达杨于铮
Owner EPISTAR CORP
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