Method for forming ultra-shallow junction

Abstract

The invention relates to a method of forming an ultra-shallow junction. The invention comprises the following steps: ions are infused into a semiconductor substrate; the pre-annealing operation is carried on to the semiconductor substrate, to heat up the semiconductor substrate from the room temperature to the intermediate temperature value; oxygen is filled, the annealing operation is carried on to the semiconductor substrate, to heat up the semiconductor substrate from the intermediate temperature value to the annealing temperature peak value; the cooling operation is carried on to the semiconductor substrate, to cool the semiconductor substrate from the annealing temperature peak value to the room temperature. A peak value annealing method is adopted in the forming process of the ultra-shallow junction, doping material activation and crystal lattice damage reconstruction can be completed simultaneously in one thermal treatment process; the oxygen is filled in the peak value annealing process, and the doping ionic diffusion is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming an ultra-shallow junction. Background technique [0002] Ion implantation is a standard technique for introducing conductivity-altering dopant materials into semiconductor substrates. In a traditional ion implantation system, the required dopant material is ionized in the ion source, and the ions are accelerated into an ion beam with a specified energy and then guided to the surface of the semiconductor substrate. The energetic ions in the ion beam penetrate into the semiconductor material and are embedded into the crystal lattice of the semiconductor material. Following ion implantation, the semiconductor substrate is annealed to activate dopant materials and repair crystallographic damage caused by ion implantation. Annealing involves heat-treating the semiconductor substrate for a specified time and temperature. [0003] The implanta...

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Problems solved by technology

When applying this method to form an ultra-shallow junction, the activation of the dopant material and the repair of the lattice damage are carried out in the laser annealing chamber and the rapid heat treatment chamber respectively, that is, two heat treatment processes are required, the steps are complicated and the production cycle is prolonged. How can the It is an urgent problem to be solved by those skilled in the art to simultaneously complete the activation of doping materials and the repair of lattice damage in one heat treatment process, and reduce the deep diffusion of ultra-shallow junctions.

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