A high price/performance ratio high-power IGBT module

Abstract

The invention provides a high-cost-performance high-power IGBT module. N(n is equals to 2) single-phase half-bridge IGBT modules 2 are connected in parallel to be combined into a high-power single-phase half-bridge IGBT module, which is supplied with power by a DC energy source 6. Loads are connected to a general power outputting port 4. The high-power IGBT module integrates an IGBT drive circuit 1 and an absorption circuit 3. A module managing control unit 5 is connected with the IGBT drive circuit 1 through an I / O interface, and the temperature of n single-phase half-bridge IGTB modules through an analog interface is collected by the module managing control unit 5. The module managing control unit dynamically distributes a work mode to each single-phase half-bridge module to optimize the system. When detecting that a certain single-phase half-bridge module goes wrong by the IGBT drive circuit, the safety control module of the module managing control unit 5 can alarm, and then the module managing control unit 5 re-distributes the work modes to the rest right single-phase half-bridge IGBT modules. The invention has the advantages that the whole power range is effective, the reliability is high, the density of the power is high, and the cost is low.

Description

technical field [0001] The invention relates to a high-power IGBT module, in particular to a high-power intelligent power electronic module equipped with parallel layout, driving, protection and absorption of insulated gate switching devices such as IGBTs. Background technique [0002] At present, there are two basic methods for increasing the output current capacity of power electronic circuits or devices: (1) parallel connection of main switching devices / modules; (2) parallel connection of circuits. The scheme of circuit parallel connection makes expansion more convenient and fast, but the power density is too low, and the output terminal usually needs to use an inductor to balance the output current, which is bulky and suitable for applications with a current above 3kA, such as power systems. In the application environment requiring high power density and high current (usually less than 3kA), such as: electric vehicles, ships, and spacecraft applications, this solution is...

AI Technical Summary

Problems solved by technology

[0004] At present, the patents and documents on IGBT modules at home and abroad mainly focus on the parallel design of IGBT chips, the design of IGBT protection drive circuits, the design of series structures, and the design of IGBT module structure layout. The parallel design of IGBT modules has not been deeply involved, and the current The parallel connection of IGBT modules is mostly open-loop. In this scheme, the current sharing of each module in parallel and the efficiency and life of the entire module are not optimal, but closed-loop parallel control is performed according to conditions such as temperature and power output to achieve system optimization (efficiency and lifespan) scheme has not been mentioned

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