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Integrated gate commutated thyristor and method of manufacturing the same

A commutation thyristor and gate commutation technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of increasing turn-on and turn-off losses, difficulties in etching process, and isolation resistance. Small problems, to achieve the effect of reducing additional loss, reducing additional gate current, and flexible process control

Active Publication Date: 2008-02-27
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Abstract
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Problems solved by technology

However, in this method, since the trench depth usually reaches tens of microns to obtain a suitable isolation resistance, it is very difficult to etch such a deep trench for the etching process, and it is difficult to accurately control the etching depth. Ground control, easy to make the formation of isolation resistance R GK The resistance value is too small
Too small isolation resistance R GK Will cause additional turn-on and turn-off current, increase turn-on and turn-off losses

Method used

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  • Integrated gate commutated thyristor and method of manufacturing the same
  • Integrated gate commutated thyristor and method of manufacturing the same
  • Integrated gate commutated thyristor and method of manufacturing the same

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Embodiment Construction

[0033] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0034] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many ways other than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the present invention is not limited to the specific examples disclosed below.

[0035] FIG. 5 to FIG. 11 are cross-sectional diagrams illustrating a method for manufacturing an integrated gate-commutated thyristor according to an embodiment of the present invention. For simplicity, the figure only shows the formation process of a basic GCT unit of the IGCT. As ...

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Abstract

The present invention discloses an integrated gate commutated thyristor. The said gate commutated thyristor includes n-type substrate, p-type doped region, n-type doped region, anodic p+ doped region of the gate commutated thyristor, diode n+ buffer region, and cathode paling of gate commutated thyristor, and also includes cathode and gate of the gate commutated thyristor, anode of the diode, anode of the gate commutated thyristor and cathode of the diode. The present invention has characters: n+-type isolating ring is set between the p-type doped regions of the gate of the gate commutated thyristor and the anode of the diode. The integrated gate commutated thyristor and its processing method can achieve effectively isolation between GCT element and the diode.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to a high-power integrated gate commutated thyristor (IGCT). Background technique [0002] IGCT (Integrated Gate Commutated Thyristor) is called integrated gate commutated thyristor. It is a new type of high-power power semiconductor device developed in recent years. The IGCT is formed by connecting many gate-commutated thyristors (GCT) through a printed circuit board and a gate drive device as a whole. IGCT is a four-layer three-terminal device, and its interior is composed of thousands of GCT combs. The IGCT is usually made of reverse conduction type, the anode of the freewheeling diode is shared with the gate of the GCT, and the cathode combs of the GCT are connected in parallel and monolithically integrated with the freewheeling diode on the same chip. The structure of the reverse conduction gate commutated thyristor GCT is shown in Fig. 1, which is a stru...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/06H01L21/822H01L21/761
Inventor 张明蒋谊陈芳林李继鲁
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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