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Two-sided polishing method for gallium phosphide crystal plate

A double-sided polishing and gallium phosphide technology, which is applied to surface polishing machine tools, grinding/polishing equipment, electrical components, etc., can solve the problems that there is no publication of double-sided polishing methods for gallium phosphide (111) wafers, etc. The method is simple, practical and operable

Active Publication Date: 2008-02-27
GRINM GUOJINGHUI NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, gallium phosphide single crystal is the main substrate material for large-scale production of red and green LEDs, and gallium phosphide is a III-V compound semiconductor material whose output is second only to gallium arsenide, but so far, there is no gallium phosphide (111 ) Wafer double-sided polishing method article published, therefore, in order to meet the domestic development of compound semiconductor industry and expand the gallium phosphide wafer market, it is necessary to provide a larger size gallium phosphide (111) wafer double-sided polishing method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] (1) Prepare a cleaning solution with a concentration of 15%, heat it to 50°C, and then put the flower basket containing the wafer into ultrasonic cleaning for 10 minutes, and rinse thoroughly;

[0016] (2) Mounting is carried out when the surface temperature of the polishing disc is 40°C;

[0017] (3) Prepare a polishing solution (FUJIMI INSEC P powder:pure water 1:10), and perform ultrasonication for 30 minutes; set the pressure of the polishing machine to 10 psi, and the flow rate of the polishing solution to 40 ml / min for polishing.

[0018] (4) After the reverse side is polished, other conditions remain unchanged. The polishing pressure value is set to 20psi, and the flow rate of the polishing liquid is 30ml / min.

[0019] (5) Ultrasonic cleaning in a cleaning solution with a concentration of 20% and a temperature of 70°C for 20 minutes, fully flushed, then corroded in 80°C hot acid for 2 minutes, and soaked in cold alkali for 1 minute.

[0020] Experimental results...

Embodiment 2

[0022] (1) Prepare a cleaning solution with a concentration of 20%, heat it to 50°C, and then put the flower basket containing the wafer into ultrasonic cleaning for 10 minutes, and rinse thoroughly;

[0023] (2) Mounting is carried out when the surface temperature of the polishing disc is 40°C;

[0024] (3) Prepare a polishing liquid (FUJIMI INSEC P powder:pure water 3:20), and ultrasonicate for 30 minutes; set the pressure value of the polishing machine to 30 psi, and the flow rate of the polishing liquid to 10 ml / min for polishing.

[0025] (4) After the reverse side is polished and other conditions remain unchanged, the polishing pressure value is set to 20 psi, and the flow rate of the polishing liquid is 10 ml / min.

[0026] (5) Ultrasonic cleaning in a cleaning solution with a concentration of 20% and a temperature of 100°C for 20 minutes, fully flushed, then corroded in 80°C hot acid for 3 minutes, and soaked in cold alkali (ammonia) for 2 minutes.

[0027] Experimenta...

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PUM

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Abstract

The invention discloses a double-faced polishing method of gallium phosphide wafer, which comprises the following steps: (1) cleaning the wafer in the abluent through ultrasound; controlling the temperature between 50 deg. c and 100 deg. c; (2) pasting; (3) placing the cooled polishing disc on the polishing cloth; using polishing arm to fix the polishing disc under 10-50psi; setting the flow of the polishing liquid at 10-40ml / min under 5-25 deg. c to polish; flushing after the thickness is standard; (4) removing the wafer; pasting; polishing another face; (5) detecting the cleaning. The invention has strong operation and convenience and utility with low cost for chemical agent, which improves the polishing yield over 85% without harming environment and human body. The total thickness of the wafer is not more than 6um with angularity not more than 25um and wafer flatness not more than 5um, which avoids the defect of spot, fog, particle, crack, orange peel and so on.

Description

technical field [0001] The invention relates to a double-sided polishing method for gallium phosphide (111) wafers, in particular to a double-sided polishing method suitable for gallium phosphide (111) wafers with a diameter of 50.8 mm. Background technique [0002] At present, gallium phosphide single crystal is the main substrate material for large-scale production of red and green LEDs, and gallium phosphide is a III-V compound semiconductor material whose output is second only to gallium arsenide, but so far, there is no gallium phosphide (111 ) wafer double-sided polishing method article published, therefore, in order to meet the domestic development of compound semiconductor industry, expand gallium phosphide wafer market, it is necessary to provide a larger size gallium phosphide (111) wafer double-sided polishing method. Contents of the invention [0003] The purpose of the present invention is to provide a double-sided polishing method for gallium phosphide (111) ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/02H01L21/304
Inventor 张晓李超杨剑李忠义
Owner GRINM GUOJINGHUI NEW MATERIALS CO LTD
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