Method for forming light absorbing layer in cis-based thin film solar battery

Abstract

This invention provides a method for forming a light absorbing layer in a CIS-based thin film solar battery, which, in a simple apparatus, the temperature within the apparatus can be rendered uniform and can improve contact between a reactive gas and selenium and sulfur. A fan (3) as an atmosphere homogenization means is provided within the apparatus. Further, objects are arranged by a method which can render the convection of the reactive gas smooth. Specifically, a plurality of flat-plate objects (2) are arranged while providing given spacing between the objects in such a manner that the objects are parallel to the longitudinal direction of the apparatus with the plate face being perpendicular thereto. Further, an internal flow passage is provided within the group of objects, and a gas flow passage is provided on the upper part, the lower part, and both sides. According to the above construction, each object can easily come into contact with the reactive gas within the apparatus, the temperature within the apparatus becomes uniform, and the contact between the reactive gas and selenium and sulfur is improved.

Description

technical field [0001] The present invention relates to a method for forming a light absorbing layer of a CIS type thin film solar cell. Background technique [0002] CIS type thin film solar cell is a pn heterojunction device with a substrate structure, which includes a glass substrate, a metal backing electrode layer, a p-type CIS light absorbing layer, a high-resistance buffer layer and an n-type window layer stacked in the following order, As shown in Figure 7. When forming the CIS light absorbing layer, Cu / Ga (workpiece 2A), Cu / In (workpiece 2B) and Cu-Ga / In shown in FIG. 5 will be included on the metal backing electrode layer on the glass substrate. The metal precursor film of the multilayer structure (hereinafter referred to as the workpiece to be processed for film formation) of any of (Work 2C) is selenized or sulfurized to form the CIS light absorbing layer. A film forming method that has been used to selenize or sulfurize workpieces to be processed for film form...

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to directly use this technology for forming the light absorbing layer of CIS type thin film solar cells

In addition, the furnace described in Patent Document 1 is a furnace in which there are baffles serving as the circulation passage, which has a complicated configuration and is expensive

So the problem with the application of this technology is that the production cost increases

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