Wiring board, method for manufacturing the same, and semiconductor device

A technology for wiring substrates and semiconductors, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, and semiconductor/solid-state device components, etc., can solve problems such as decreased bonding strength of conductor wiring 23 and insulating substrate 22, no bonding, etc.

Inactive Publication Date: 2007-11-28
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, in the semiconductor device using the conventional wiring board 21 shown in FIG. Plating grows in contact with the surface of the insulating substrate 22, but does not bond
Therefore, when the wiring width of the conductor wiring 23 is reduced in accordance with the narrowing of the pitch of the electrode pads 27, the bonding strength between the conductor wiring 23

Method used

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  • Wiring board, method for manufacturing the same, and semiconductor device
  • Wiring board, method for manufacturing the same, and semiconductor device
  • Wiring board, method for manufacturing the same, and semiconductor device

Examples

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no. 1 Embodiment approach

[0039] FIG. 1 is a plan view showing a wiring board 1 according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view showing A-A' of FIG. 1 .

[0040] In FIGS. 1 and 2 , 2 is an insulating base material, 2 is an adhesive layer formed on the surface of the insulating base material 2 , and 4 is a conductor wiring formed on the adhesive layer 3 . Protruding electrodes 5 are formed across regions on the adhesive layer 3 on both sides of the conductor wiring 4 across the longitudinal direction of the tip portion of the conductor wiring 4 . As shown in FIG. 2 , the back surface of the conductor wiring 4 in the area where the protruding electrode 5 is formed and the back surface and a part of the side surface of the area of ​​the protruding electrode 5 formed on the adhesive layer 3 on both sides of the conductor wiring 4 are bonded together. The surface of the layer 3 is recessed inwardly, and is adhered to the adhesive layer 3 .

[0041] Here, a fle...

no. 2 Embodiment approach

[0047] The wiring board in the second embodiment of the present invention has the structure shown in cross-sectional view in FIG. 2 above.

[0048] In the cross-sectional view of FIG. 2 , the width of the protruding electrodes 5 formed across the lengthwise direction of the conductor wiring 4 and across the regions on the adhesive layer 3 on both sides of the conductor wiring 4 is wider than the width of the back surface of the conductor wiring 4 , In addition, the surface of the area from the back surface of the conductor wiring 4 to the side surface of the protruding electrode 5 via the back surface of the protruding electrode 5 is smoothly formed in a convex shape. Parts of the rear surface and side surfaces of the protruding electrodes 5 are recessed from the surface of the adhesive layer 3 and bonded to the adhesive layer 3 .

[0049] According to the second embodiment, no gap is formed between the side surface of the protruding electrode 5 and the adhesive layer 3, and t...

no. 3 Embodiment approach

[0051] FIG. 3 is a cross-sectional view showing wiring board 1 in a third embodiment of the present invention. In FIG. 3, the insulating base material 2, the adhesive layer 3, the conductor wiring 4, and the protruding electrodes 5 are the same as those of the first embodiment. Furthermore, a first conductive layer 6 is provided to cover the protruding electrodes 5 , and the back and side surfaces of the protruding electrodes 5 and the adhesive layer 3 are bonded together through the first conductive layer 6 .

[0052] Here, the first conductive layer 6 is formed to have a thickness of about 0.3 μm to 2 μm, for example, by electrolytic Au plating. In addition, Au is formed with a thickness of about 0.5 μm in consideration of the barrier properties and materials of the first conductive layer 6 . In addition, the first conductive layer 6 may be formed of various materials, for example, the bottom layer may be Ni with a thickness of about 1 μm, and the surface layer may be Au wi...

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Abstract

A wiring board includes an insulating base; an adhesive layer formed on the surface of the insulating base; a conductor wiring formed on the surface of the adhesive layer; and a bump formed crossing the longitudinal direction of the conductor wiring over regions on the adhesive layer on both sides of the conductor wiring, wherein the back face at a part of the conductor wiring where the bump is formed, and the back faces and parts of the side faces of the bump formed above the regions of the adhesive layer on both sides of the conductor wiring, are embedded in the surface of the adhesive layer so as to be adhered to the adhesive layer. Even when the wiring width of the conductor wiring is decreased, the conductor wiring can be adhered to the wiring board firmly.

Description

technical field [0001] The present invention relates to a wiring board on which protruding electrodes are formed, a method of manufacturing the same, and a semiconductor device using the wiring board. Background technique [0002] A semiconductor device is well known. Through the TAB (Tape Automated Bonding) process, which is often used in semiconductor devices such as liquid crystals, a wiring substrate with protruding electrodes is used to mount semiconductor elements face down on the wiring substrate. The protruding electrodes of the substrate and the electrode pads on the semiconductor element are bonded (see, for example, US2004 / 0212969A1). [0003] Hereinafter, a conventional wiring board having protruding electrodes and a semiconductor device using the wiring board will be described with reference to the drawings. FIG. 8 is a plan view showing a conventional wiring substrate 21, and FIG. 9 is a B-B' cross-sectional view of FIG. 8 . [0004] In FIGS. 8 and 9 , 22 is ...

Claims

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Application Information

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IPC IPC(8): H01L23/498H01L23/488H01L21/48H01L21/603H01L21/607H01L23/12H05K1/02H05K3/24H05K3/32
CPCH01L24/12H01L21/4853H01L2924/01082H05K3/244H05K3/243H01L2224/81203H05K3/328H01L2224/81801H01L2224/13109H05K3/4007H01L2924/01029H01L2224/13147H01L2224/13099H05K2201/10674H01L2224/81205H01L24/11H05K1/111H05K3/386H01L23/49816H01L24/81H01L2924/01079H01L24/16H05K2203/0278H05K2201/0367H01L2924/01005H01L2924/01033H01L2924/01006H01L2224/81192H05K2203/0285H01L2924/01078H01L2224/16227H01L2224/16225H01L2224/11462H01L2924/351H01L2224/05022H01L2224/05001H01L2224/05572H01L2224/05155H01L2224/05644Y10T29/49155H01L24/13H01L24/05H01L2924/00H01L2924/00014H05K1/02
Inventor 下石坂望中村嘉文
Owner PANASONIC CORP
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